Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-04-26T21:36:34.641Z Has data issue: false hasContentIssue false
  • English
  • Français

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Published online by Cambridge University Press:  03 March 2011

Jennifer Ross ,
Mike Rubin  and
T.K. Gustafson
Jennifer Ross
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, MS 2-300, Berkeley, California 94720
Mike Rubin
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, MS 2-300, Berkeley, California 94720
T.K. Gustafson
Affiliation:
University of California, 183M Cory, Berkeley, California 94720
Get access

Abstract

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2613 - 2616
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).CrossRefGoogle Scholar
2Nakamura, S., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 30, L1708 (1991).CrossRefGoogle Scholar
3Morimoto, Y., Uchiho, K., and Ushio, S., J. Electrochem. Soc. 120, 1783 (1973).CrossRefGoogle Scholar
4Lei, T., Fanciulli, M., Molnar, R., Moustakas, T., Graham, R., and Scanlon, J., Appl. Phys. Lett. 59, 944 (1991).CrossRefGoogle Scholar
5Someno, Y., Sasaki, M., and Hirai, T., J. Jpn. Appl. Phys. 30, 1792 (1991).CrossRefGoogle Scholar
6Depuie, J. L. and Gulari, E., Appl. Phys. Lett. 59, 549 (1991).CrossRefGoogle Scholar
7Lei, T., Moustakas, T. D., Graham, R. J., He, Y., and Berkowitz, S. J., J. Appl. Phys. 71, 1 (1992).Google Scholar
8Kosikicki, B. and Kahang, D., J. Vac. Sci. Technol. 6, 593 (1969).CrossRefGoogle Scholar
9Okumura, H., Misawa, S., and Yoshida, S., Appl. Phys. Lett. 59, 1058 (1991).CrossRefGoogle Scholar
10Fujieda, S. and Matsumoto, Y., Jpn. J. Appl. Phys. 30, L1665 (1991).CrossRefGoogle Scholar
11Martin, G., Strite, S., Thornton, J., and Morkoç, H., Appl. Phys. Lett. 58, 2375 (1991).CrossRefGoogle Scholar
12Strite, S., Ruan, J., Li, Z., Salvador, A., Chen, H., Smith, D., Choyke, W. J., and Morkçc, H., J. Vac. Sci. Technol. B 9, 1924 (1991).CrossRefGoogle Scholar
13Mizuta, M., Fujieda, S., Matsumoto, Y., and Kawamura, T., Jpn. J. Appl. Phys. 25, L945 (1986).CrossRefGoogle Scholar
14Ross, J., Rubin, M., and Gustafson, T. K., in Wide Band Gap Semiconductors, edited by Moustakas, T. D., Pankove, J. I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), p. 457.Google Scholar
15Sitar, Z., Paisley, M. J., Yan, B., Ruan, J., Choyke, W. J., and Davis, R. F., J. Vac. Sci. Technol. B 8, 316 (1990).CrossRefGoogle Scholar
16Paisley, M., Sitar, Z., Posthill, J., and Davis, R., J. Vac. Sci. Technol. A 7, 701 (1989).CrossRefGoogle Scholar
17Sasaki, T. and Matsuoka, T., J. Appl. Phys. 64, 4531 (1988).CrossRefGoogle Scholar
18Powell, R. C., Tomasch, G., Kim, Y-W., Thornton, J., and Greene, J., in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by Glass, J.T., Messier, R. F., and Fujimori, N. (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 525.Google Scholar
19Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).CrossRefGoogle Scholar
20Yoshida, S., Misawa, S., and Gonda, S., Appl. Phys. Lett. 42, 427 (1983).CrossRefGoogle Scholar
21Ross, J. and Rubin, M., Mater. Lett. 12, 215 (1991).CrossRefGoogle Scholar