Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-23T11:22:44.486Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon carbide grown by liquid phase epitaxy in microgravity

Published online by Cambridge University Press:  31 January 2011

R. Yakimova ,
M. Syväjärvi ,
C. Lockowandt ,
M. K. Linnarsson ,
H. H. Radamson  and
E. Janzén
R. Yakimova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Syväjärvi
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
C. Lockowandt
Affiliation:
Swedish Space Corporation, PO Box 4207, S-171 04 Solna, Sweden
M. K. Linnarsson
Affiliation:
Solid State Electronics, Royal Institute of Technology, S-164 40 Kista-Stockholm, Sweden
H. H. Radamson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
Get access

Extract

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1812 - 1815
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Neudeck, P. G., J. El. Mat. 24, 283 (1995).CrossRefGoogle Scholar
2.Bauser, E., in Crystal Growth of Electronic Materials, edited by Kaldis, E. (North-Holland, Amsterdam, 1985), p. 41.Google Scholar
3.Lockowandt, C., Yakimova, R., Syväjärvi, M., and Janzén, E., 47th International Astronautical Congress, 7–11 October 1996, Beijing, China, in press.Google Scholar
4.Mlavsky, A. I. and Weinstein, M., J. Appl. Phys. 34, 2885 (1963).CrossRefGoogle Scholar
5.Yakimova, R., Tuominen, T., Bakin, A. S., Fornell, J-O., Vehanen, A., and Janzén, E., Inst. Phys. Conf. Ser. 142, 101 (1996).Google Scholar
6.Syväjärvi, M., Yakimova, R., Ivanov, I. G., and Janzén, E., Mat. Sci. Eng. B 46, 329 (1997).CrossRefGoogle Scholar
7.Fewster, P. F., Appl. Surf. Sci. 90, 381 (1991).Google Scholar
8.Fluid Sciences and Material Sciences in Space–A European Perspective, edited by Walter, H. U. (Springer-Verlag, Berlin, 1987), p. 327.CrossRefGoogle Scholar
9.Sikegawa, T., Kimura, M., and Tanaka, A., J. Cryst. Growth 108, 598 (1991).CrossRefGoogle Scholar
10.Tairov, Yu. M. and Tsvetkov, V. F., Tehnologuya poluprovodnikovyh i dielectrikheskih materialov, Moskva, Vysshaya Shkola (1983), p. 189 (in Russian).Google Scholar