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Self-organization in porous 6H–SiC

Published online by Cambridge University Press:  31 January 2011

S. Zangooie ,
J. A. Woollam  and
H. Arwin
S. Zangooie
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588–0511
J. A. Woollam
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588–0511
H. Arwin
Affiliation:
Department of Physics and Measurements Technology, Laboratory of Applied Optics, Linköping University, SE-58183, Sweden
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Abstract

Pores in porous 6H–SiC were found to propagate first nearly parallel with the basal plane and gradually change direction and align with the c axis. As a consequence, well-defined columnar pores were formed. It was shown that the rate of change of propagation directions was influenced by the etching parameters, such as hydrofluoric acid concentration and current density. Larger currents resulted in formation of larger pores. Pore sizes were found to increase with depth due to a decrease of the acid concentration. In addition, due to chemical etching effects, larger pore sizes were obtained close to the sample surface.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1860 - 1863
Copyright
Copyright © Materials Research Society 2000

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