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Selective solution shearing deposition of high performance TIPS-pentacene polymorphs through chemical patterning

Published online by Cambridge University Press:  31 October 2014

Gaurav Giri ,
Eric Miller  and
Zhenan Bao
Gaurav Giri
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
Eric Miller
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
Zhenan Bao*
Affiliation:
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Methods for the solution deposition of organic semiconductors (OSCs) show great potential for the production of large-area, inexpensive, and flexible organic electronics. A solution deposition method called solution shearing has consistently been shown to yield thin film transistors with improved performance over those created via other solution-based approaches. However, the need for discrete, electronically isolated devices requires the parallel development of a facile means of pattern definition compatible with the solution shearing process. In our work, we use a simple chemical prepatterning method to enable the solution shearing deposition of the small molecule OSC TIPS-pentacene on substrates with feature sizes as small as 100 µm. Grazing incidence x-ray diffraction (GIXD) was also used to confirm the existence of high performance TIPS-pentacene polymorphs in the patterned thin films. Mobilities as high as 1.13 cm2 V−1 s−1 were obtained on 400 µm wide patterns by depositing a high-performance, metastable polymorph of TIPS-pentacene.

Keywords

organicsemiconductorpatterning
Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 29 , Issue 22 , 28 November 2014 , pp. 2615 - 2624
Copyright
Copyright © Materials Research Society 2014 

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