Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-24T13:08:41.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation

Published online by Cambridge University Press:  31 January 2011

R. Ramesham  and
T. Roppel
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
T. Roppel
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, Alabama 36849-5201
Get access

Abstract

Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Processes were developed to selectively damage the substrates by ultrasonic agitation in methanol containing diamond particles of typical size 90 μm. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1144 - 1151
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Field, J. E., The Properties of Diamond (Academic Press, Ltd., London, 1979).Google Scholar
2.Whetten, T. J., Armstead, A. A., Grzybowski, T. A., and Ruoff, A. L., J. Vac. Sci. Technol. A2, 477 (1984).CrossRefGoogle Scholar
3.Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. Sci. Technol. B3, 416 (1985).CrossRefGoogle Scholar
4.Mitsuda, K., Kojima, Y., Yoshida, T., and Akashi, K., J. Mater. Sci. 22, 1557 (1987).CrossRefGoogle Scholar
5.Yugo, S., Kimura, T., Kanai, H., and Adachi, Y., in Novel Refractory Semiconductors, edited by Emin, D., Aselage, T. L., and Wood, C. (Mater. Res. Soc. Symp. Proc. 97, Pittsburgh, PA, 1987), pp. 327–332.Google Scholar
6.Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63, 1744 (1988).CrossRefGoogle Scholar
7.Ramesham, R. and Ellis, C., J. Mater. Res. 7, 1190–1195 (1992).Google Scholar
8.Ramesham, R. and Ellis, C., in Wide Band-Gap Semiconductors, edited by Moustakas, T. D., Pankove, J. I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992).Google Scholar
9.Denning, P. A. and Stevenson, D. A., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Int. Conf. Proc. Series, Pittsburgh, PA, 1991), pp. 403–408.Google Scholar
10.Denning, P. A. and Stevenson, D. A., in Proc. 1st Int. Conf. on the Applications of Diamond Thin Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M., and Feldman, A., Auburn, AL, August 17–22, 1991 (Materials Science Monographs, 73, Elsevier, Amsterdam), pp. 383–388.Google Scholar
11.Hirabayashi, K. and Taniguchi, Y., Appl. Phys. Lett. 53, 1815 (1988).CrossRefGoogle Scholar
12.Kobashi, K., Miyata, K., Kumagai, K., Nakaue, A., Tachibana, H., Inoue, T., and Kawate, Y., The Electrochemical Society, 175th Meeting, Los Angeles, CA, Paper #82 (1989), pp. 122–123.Google Scholar
13.Davidson, J. L., Ramesham, R., and Ellis, C., Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, Crystal City, VA, Paper #TP3 (1989).Google Scholar
14.Davidson, J. L., Ellis, C., and Ramesham, R., J. Electron. Mater. 18, 711 (1989).CrossRefGoogle Scholar
15.Ramesham, R., Ellis, C., Roppel, T., Jaworske, D. A., and Baugh, W., in Plasma Processing and Synthesis of Materials III, edited by Apelian, D. and Szekely, J. (Mater. Res. Soc. Symp. Proc. 190, Pittsburgh, PA, 1991), pp. 341–348.Google Scholar
16.Ramesham, R., Ellis, C., and Roppel, T., 3rd Int. Conf. on Amorphous and Crystalline Silicon Carbide (ICACSC'90), Howard University, Washington, DC, Paper #V.4, April 12–13 (1990).Google Scholar
17.Ramesham, R., Roppel, T., Ellis, C., Jaworske, D. A., and Baugh, W., J. Mater. Res. 6, 1278 (1991).CrossRefGoogle Scholar
18.Ramesham, R., Roppel, T., Hajek, B. F., Ellis, C., and Loo, B. H., in New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R. (Mater. Res. Soc. Int. Conf. Proc. Series, Pittsburgh, PA, 1991), pp. 943–948.Google Scholar
19. Davidson, J. L., Ramesham, R., and Ellis, C., J. Electrochem. Soc. 137, 3206 (1990).CrossRefGoogle Scholar
20.Ramesham, R., in Wide Band-Gap Semiconductors, edited by Moustakas, T., Pankove, J.I., and Hamakawa, Y. (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992).Google Scholar
21.Ma, J.S., Kawarada, H., Yonehara, T., Suzuki, J.I., Wei, J., Yokota, Y., and Hiraki, A., Appl. Phys. Lett. 55, 1071 (1989).CrossRefGoogle Scholar
22.Geis, M. W., Proc. of the IEEE 79, 5, 669 (1991).CrossRefGoogle Scholar
23.Ramesham, R., Roppel, T., Hajek, B.F., and Ellis, C., J. Electrochem. Soc. 137, 3203 (1990).CrossRefGoogle Scholar
24.Jaworske, D. A., Ellis, C. D., Ramesham, R., and Roppel, T., in Proc. 2nd Int. Symp. on Diamond Materials,edited by Purdes, A. J., Angus, J., Davis, R. F., Meyerson, B. M., Spear, K. E., and Yoder, M. (The Electrochemical Society, Pennington, NJ, 91–8, 1991) pp. 608–614.Google Scholar