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Seeded epitaxial growth of ZnO thin films on MgAl2O4 substrates using the chemical solution deposition method

Published online by Cambridge University Press:  03 March 2011

Jin Hyeok Kim ,
Boram Kim ,
David Andeen  and
Fred F. Lange
Jin Hyeok Kim*
Affiliation:
Photonic and Electronic Thin Film Laboratory, School of Materials Science and Engineering, Chonnam National University, Puk-Gu, Gwangju 500-757, South Korea
Boram Kim
Affiliation:
Photonic and Electronic Thin Film Laboratory, School of Materials Science and Engineering, Chonnam National University, Puk-Gu, Gwangju 500-757, South Korea
David Andeen
Affiliation:
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
Fred F. Lange
Affiliation:
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Epitaxial ZnO thin films were grown on (111) MgAl2O4 with a pre-seeded, two-step chemical solution deposition process. Isolated, epitaxial ZnO islands (seeds) were formed on the substrate in the first step by spin coating a very thin layer of the precursor solution and heat-treating to 950 °C/3 h. In the second step, the seeded substrate was coated with another layer of precursor to produce an epitaxial film. The result was compared with the case in which a MgAl2O4 substrate was not seeded. Both the seeded and unseeded ZnO films have out-of-plane and in-plane orientation relationships of , respectively. However, only the seeded ZnO films have very faceted surface morphology without grain boundaries, indicating epitaxy, whereas the unseeded ZnO films have deep grain boundaries indicative of polycrystalline nature. This result shows that the formation of seeds in the first step plays an instrumental role in the formation of an epitaxial ZnO film.

Keywords

EpitaxyOxideSolution deposition
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 943 - 949
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Klingshirn, C.: The luminescence of ZnO under high one- and two-quantum excitation. Phys. Status Solidi B 71, 547 (1975).CrossRefGoogle Scholar
2Yamazaki, O., Mitsuyu, T., and Wasa, K.: ZnO thin-film SAW devices. IEEE Trans. Sonics Ultrason. SU-27, 369 (1980).Google Scholar
3Ye, J., Gu, S., Zhu, S., Chen, T., Hu, L., Qin, F., Zhang, R., Shi, Y., and Zheng, Y.: The growth and annealing of single crystalline ZnO films by low-pressure MOCVD. J. Cryst. Growth 243, 151 (2002).CrossRefGoogle Scholar
4Verghese, P.M. and Clarke, D.R.: Surface textured zinc oxide films. J. Mater. Res. 14, 1039 (1999).CrossRefGoogle Scholar
5Saeki, H., Tabata, H., and Kawai, T.: Magnetic and electric properties of vanadium doped ZnO films. Solid State Commun. 120, 439 (2001).CrossRefGoogle Scholar
6Tang, Z.K., Wong, G.K.L., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y.: Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Appl. Phys. Lett. 72, 3270 (1998).Google Scholar
7Chen, Y., Hong, S., Ko, H., Nakajima, M., Yao, T., and Segawa, Y.: Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates. Appl. Phys. Lett. 76, 245 (2000).CrossRefGoogle Scholar
8Igasaki, Y. and Saito, H.: Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (1210). J. Appl. Phys. 69, 2190 (1991).CrossRefGoogle Scholar
9Kim, Y-J. and Kim, K-W.: Characteristics of epitaxial ZnO films on sapphire substrates deposited using RF-magnetron sputtering. Jpn. J. Appl. Phys. 36(Part 1), 2277 (1997).Google Scholar
10Kuppusami, P., Vollweiler, G., Rafaja, D., and Ellmer, K.: Epitaxial growth of aluminium-doped zinc oxide films by magnetron sputtering on (001), (110), and (012) oriented sapphire substrates. Appl. Phys. A, Mater. Sci. & Proc. 80, 183 (2005).Google Scholar
11Robien, M., Henrion, W., Bar, M., and Fischer, C-H.: Optical properties of ZnO thin films: Ion layer gas reaction compared to sputter deposition. Appl. Phys. Lett. 80, 3518 (2002).CrossRefGoogle Scholar
12Lange, F.F.: Chemical solution routes to single-crystal thin films. Science 273, 903 (1996).CrossRefGoogle ScholarPubMed
13Niesen, T.P. and De Guire, M.R.: Review: Deposition of ceramic thin films at low temperatures from aqueous solutions. Solid State Ionics 151, 61 (2002).CrossRefGoogle Scholar
14Schwartz, R.W., Schneller, T., and Waser, R.: Chemical solution deposition of electronic oxide films. Comptes Rendus Chimie 7, 433 (2004).Google Scholar
15Ohyama, M., Kozuka, H., and Yoko, T.: Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution. Thin Solid Films 306, 78 (1997).CrossRefGoogle Scholar
16Kokubun, Y., Kimura, H., and Nakagomi, S.: Preparation of ZnO thin films on sapphire substrates by sol-gel method. Jpn. J. Appl. Phys. 42, L904 (2003).CrossRefGoogle Scholar
17Ghosh, R., Basak, B., and Fujihara, S.: Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films. J. Appl. Phys. 96, 2689 (2004).CrossRefGoogle Scholar
18Wessler, B., Steinecker, A., and Mader, W.: Epitaxial growth of ZnO thin films on ScAlMgO4 (0 0 0 1) by chemical solution deposition. J. Cryst. Growth 242, 283 (2002).CrossRefGoogle Scholar
19Wessler, B., Lange, F.F., and Mader, W.: Textured ZnO thin films on 0001 sapphire produced by chemical solution deposition. J. Mater. Res. 17, 1644 (2002).CrossRefGoogle Scholar
20Andeen, D., Loeffler, L., Padture, N., and Lange, F.F.: Crystal chemistry of epitaxial ZnO on (1 1 1) MgAl2O4 produced by hydrothermal synthesis. J. Cryst. Growth 259, 103 (2003).Google Scholar
21Seifert, A., Vojta, A., Speck, J.S., and Lange, F.F.: Microstructural instability in single-crystal thin films. J. Mater. Res. 11, 1470 (1996).CrossRefGoogle Scholar
22Kim, J.H. and Lange, F.F.: Seeded epitaxial growth of PbTiO3 thin films on (001) LaAlO3 using the chemical solution deposition method. J. Mater. Res. 14, 1626 (1999).CrossRefGoogle Scholar
23Miller, K.T., Lange, F.F., and Marshall, D.B.: The instability of polycrystalline thin films: Experiment and theory. J. Mater. Res. 5, 151 (1990).CrossRefGoogle Scholar
24Thompson, C.V., Floro, J., and Smith, H.I.: Epitaxial grain growth in thin metal films. J. Appl. Phys. 67, 4099 (1990).CrossRefGoogle Scholar
25Schwartz, R.W., Clem, P.G., Voigt, J.A., Byhoff, E.R., Van Stry, M., Headley, T.J., and Missert, N.A.: Control of microstructure and orientation in solution-deposited BaTiO3 and SrTiO3 thin films. J. Am. Ceram. Soc. 82, 2359 (1999).CrossRefGoogle Scholar
26Miller, K.T. and Lange, F.F.: Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding. J. Mater. Res. 6, 2387 (1991).CrossRefGoogle Scholar
27Derouin, T.A., Lakeman, C.D.E., Wu, X.H., Spectk, J.S., and Lange, F.F.: Effect of lattice mismatch on the epitaxy of sol-gel LiNbO3 thin films. J. Mater. Res. 12, 1391 (1997).CrossRefGoogle Scholar