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Room-temperature hydrogen-induced resistivity response of Pd/Mg–Ni films

Published online by Cambridge University Press:  31 January 2011

Chung Wo Ong*
Affiliation:
Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The structure and the response of the effective electrical resistivity 〈ρ〉 in hydrogenation–dehydrogenation processes of palladium-coated/magnesium-nickel (Pd/Mg–Ni) films were investigated as functions of Mg-to-Ni ratio, substrate temperature, and thickness of Pd overcoat. Films of noncrystalline structures with various Mg-to-Ni ratios showed prominent hydrogen-(H-)induced switching effect of 〈ρ〉. A film is supposed to contain segregated noncrystalline regions of different Mg-to-Ni ratios. The regions of an Mg-to-Ni ratio close to 2 are responsible for the switching processes. At room temperature, a dehydrogenation process is much slower than a hydrogenation process. Crystallization hindered the H-induced switching effect of 〈ρ〉. The use of a thicker Pd overcoat accelerated the change of 〈ρ〉 in the initial hydrogenating process but diminished the contrast. Results led to some discussions on the mechanisms governing the switching effects.

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Articles
Copyright
Copyright © Materials Research Society 2009

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