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Role of rapid photothermal processing in environmentally conscious semiconductor manufacturing

Published online by Cambridge University Press:  31 January 2011

R. Sharangpani  and
R. Singh
R. Sharangpani
Affiliation:
Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634-0915
R. Singh
Affiliation:
Department of Electrical and Computer Engineering and Materials Science and Engineering Program, Clemson University, Clemson, South Carolina 29634-0915
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Extract

Compliance with the increasingly stringent environmental laws will force the phasing out of conventional methods for the manufacture of all semiconductor devices. Development of processes with the highest possible material and energy efficiencies is the heart of the present ecological preservation efforts. Besides other benefits, rapid isothermal processing (RIP) also uses less energy than furnace processing. Further increase of material and energy efficiencies is possible by using rapid photothermal processing. Central to this method is the use of quantum photoeffects in conventional RIP systems. This approach can be consolidated with advanced chemical vapor deposition methods that further lower the wastages leading to systems that can give significant improvements over those presently used. Key experimental results and possible future directions are presented.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 1 , January 1998 , pp. 61 - 67
Copyright
Copyright © Materials Research Society 1998

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References

1.R&D Mag. Res. Bull. 9 (December 1994).Google Scholar
2.Walton, , Energy User News 19 (10), 29 (1994).Google Scholar
3.Allen, D. T., Mater. Res. Soc. Bull. 30 (1992).Google Scholar
4.Newboe, B., Semicond. Int. 50 (November, 1993).Google Scholar
5.The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, 1994), p. 66.Google Scholar
6. Reference 5, pp. 70–77.Google Scholar
7.Singh, R., J. Appl. Phys. 63, R59 (1988).CrossRefGoogle Scholar
8.Singh, R., Sharangpani, R., Cherukuri, K. C., Chen, Y., Dawson, D. M., Poole, K. F., Rohatgi, A., Narayan, S., and Thakur, R. P. S., in Rapid Thermal and Integrated Processing V, edited by Gelpey, J. C., Ozturk, M., Thakur, R. P. S., Fioty, A., and Roozeboom, F. (Mater. Res. Soc. Symp. Proc. 429, Pittsburgh, PA, 1996), p. 81.Google Scholar
9. Private communication with Mr. Leonard Rosenbaum (CVD Inc., Ronkonkoma, NY) and Eric Collins (Thermcraft, Winston Salem, NC).Google Scholar
10. Private communication with Mr. Jeff Kmirk, AG Associates, Anaheim, CA.Google Scholar
11.Singh, R., Chou, P., Radpour, F., Nelson, A. J., and Ullal, H. S., J. Appl. Phys. 66, 2381 (1989).CrossRefGoogle Scholar
12.Singh, R., Sharangpani, R., and Chen, Y., Proc. 13th Int. Conf. on CVD, edited by Besmann, T. M., Allendorf, M. D., Robinson, M., and Ulrich, R. K. (The Electrochemical Society, Pennington, NJ, 1996), Vol. 96–5, p. 213.Google Scholar
13.Singh, R., Proc. Int. Conf. on Beam Processing of Advanced Materials (The Minerals, Metals & Materials Society, Warrendale, PA, 1993), p. 619.Google Scholar
14.Sharangpani, R., Cherukuri, K. C., and Singh, R., J. Electrochem. Soc. 144, 669 (1997).CrossRefGoogle Scholar
15.Singh, R., Gong, C., and Chaudhary, J., Novel Techniques in Synthesis and Processing of Advanced Materials, edited by Singh, J. and Copley, S. M. (The Minerals, Metals and Materials Society, Warrendale, PA, 1994), p. 215.Google Scholar
16. Ushio America Inc. Product Information, 20101 South Vermont Ave., Torrance, CA 90502, p. 8.Google Scholar
17.Sharangpani, R., Singh, R., Drews, M., and Ivey, K., J. Electron. Mater. 26, 402 (1997).CrossRefGoogle Scholar
18.Singh, R., Cherukuri, K., Vedula, L., Rohatgi, A., and Narayanan, A., J. Electron. Mater. 26, 1421 (1997).Google Scholar
19.Sullivan, L. A. and Han, B., Solid State Technol. 91 (May, 1996).Google Scholar
20.Sharangpani, R. and Singh, R., in Proc. 3rd Dielectrics for ULSI/VLSI Multilevel Interconnect Conf. (DUMIC), edited by Wade, T. E. (VLSI Multilevel Interconnect Conference, 1997).Google Scholar
21. Teflon AF Price List, published by DuPont Polymers, August 1989.Google Scholar
22.Singer, Peter, Semicond. Int. 92 (June 1993).Google Scholar
23.Sharangpani, R. and Singh, R., Rev. Sci. Instrum. 68, 1564 (1997).CrossRefGoogle Scholar