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Recent studies of oxide-semiconductor heterostructures using aberration-corrected scanning transmission electron microscopy

Published online by Cambridge University Press:  01 August 2016

David J. Smith ,
HsinWei Wu ,
Sirong Lu ,
Toshihiro Aoki ,
Patrick Ponath ,
Kurt Fredrickson ,
Martin D. McDaniel ,
Edward Lin ,
Agham B. Posadas  and
Alexander A. Demkov
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David J. Smith*
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA
HsinWei Wu
Affiliation:
School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287-6106, USA
Sirong Lu
Affiliation:
School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287-6106, USA
Toshihiro Aoki
Affiliation:
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, USA
Patrick Ponath
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA
Kurt Fredrickson
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA
Martin D. McDaniel
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, USA
Edward Lin
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, USA
Agham B. Posadas
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA
Alexander A. Demkov
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA
John Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712, USA
Martha R. McCartney
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The integration of dissimilar materials is highly desirable for many different types of device applications but often challenging to achieve in practice. The unrivalled imaging capabilities of the aberration-corrected electron microscope enable enhanced insights to be gained into the atomic arrangements across heterostructured interfaces. This paper provides an overview of our recent observations of oxide-semiconductor heterostructures using aberration-corrected high-angle annular-dark-field and large-angle bright-field imaging modes. The perovskite oxides studied include strontium titanate, barium titanate, and strontium hafnate, which were grown on Si(001) and/or Ge(001) substrates using the techniques of molecular-beam epitaxy or atomic-layer deposition. The oxide layers displayed excellent crystallinity and sharp, abrupt interfaces were observed with no sign of any amorphous interfacial layers. The Ge(001) substrate surfaces invariably showed both 1× and 2× periodicity consistent with preservation of the 2 × 1 surface reconstruction following oxide growth. Overall, the results augur well for the future development of functional oxide-based devices integrated on semiconductor substrates.

Keywords

atomic-layer depositionmolecular-beam epitaxy (MBE)transmission electron microscopy (TEM)
Type
Invited Article
Information
Journal of Materials Research , Volume 32 , Issue 5: Focus Issue: Aberration Corrected Transmission Electron Microscopy , 14 March 2017 , pp. 912 - 920
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Copyright
Copyright © Materials Research Society 2016 

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Footnotes

Contributing Editor: Thomas Walther

References

REFERENCES

Chambers, S.A.: Epitaxial growth and properties of doped transition metal and complex oxide films. Adv. Mater. 22, 219 (2010).CrossRefGoogle ScholarPubMed
Ngai, J.H., Walker, F.J., and Ahn, C.H.: Correlated oxide physics and electronics. Annu. Rev. Mater. Res. 44, 1 (2014).CrossRefGoogle Scholar
Demkov, A.A. and Posadas, A.B.: Integration of Functional Oxides with Semiconductors (Springer-Verlag, New York, 2014).CrossRefGoogle Scholar
McKee, R.A., Walker, F.J., and Chisholm, M.F.: Crystalline oxides on silicon: The first five monolayers. Phys. Rev. Lett. 81, 3014 (1998).CrossRefGoogle Scholar
Demkov, A.A., Ponath, P., Fredrickson, K., Posadas, A.B., McDaniel, M.D., Ngo, T.Q., and Ekerdt, J.G.: Integrated films of transition metal oxides for information technology. Microelectron. Eng. 147, 285 (2015).CrossRefGoogle Scholar
Haider, M., Uhlemann, S., Schwan, E., Rose, H., Kabius, B., and Urban, K.: Electron microscopy image enhanced. Nature 392, 768 (1998).Google Scholar
Krivanek, O.L., Dellby, N., and Lupini, A.R.: Towards sub-Å electron beams. Ultramicroscopy 78, 1 (1999).CrossRefGoogle Scholar
O'Keefe, M.A.: Seeing atoms with aberration-corrected sub-Ångstrom microscopy. Ultramicroscopy 108, 196 (2008).CrossRefGoogle ScholarPubMed
Dahmen, U., Erni, R., Radmilovic, V., Kisielowski, C., Rossell, M-D., and Denes, P.: Background, status and future of the transmission electron aberration-corrected microscope project. Philos. Trans. R. Soc., A 367, 3795 (2009).CrossRefGoogle ScholarPubMed
Krivanek, O.L., Chisholm, M.F., Nicolosi, V., Pennycook, T.J., Corbin, G.J., Dellby, N., Murfitt, M.F., Own, C.S., Szilagyi, Z.S., Oxley, M.P., Pantelides, S.T., and Pennycook, S.J.: Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy. Nature 464, 571 (2010).CrossRefGoogle ScholarPubMed
Zhou, W., Kapetanakis, M.D., Prange, M.P., Pantelides, S.T., Pennycook, S.J., and Idrobo, J-C.: Direct determination of the chemical bonding of individual impurities in graphene. Phys. Rev. Lett. 109, 206803 (2012).CrossRefGoogle ScholarPubMed
McDaniel, M.D., Ngo, T.Q., Hu, S., Posadas, A., Demkov, A.A., and Ekerdt, J.G.: Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors. Appl. Phys. Rev. 2, 041301 (2015).CrossRefGoogle Scholar
Wilk, G.D., Wallace, R.M., and Anthony, J.M.: Gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).CrossRefGoogle Scholar
Reiner, J.W., Kolpak, A.M., Segal, Y., Garrity, K.F., Ismail-Beigi, S., Ahn, C.H., and Walker, F.J.: Crystalline oxides on silicon. Adv. Mater. 22, 2919 (2010).CrossRefGoogle ScholarPubMed
Wu, H., Aoki, T., Posadas, A.B., Demkov, A.A., and Smith, D.J.: Anti-phase boundaries at the SrTiO3/Si(001) interface studied using aberration-corrected scanning transmission electron microscopy. Appl. Phys. Lett. 108, 091605 (2016).CrossRefGoogle Scholar
Ponath, P., Posadas, A.B., Hatch, R.C., and Demkov, A.A.: Preparation of a clean Ge(001) surface using oxygen plasma cleaning. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.—Process., Meas., Phenom. 31, 031201 (2013).CrossRefGoogle Scholar
Ponath, P., Fredrickson, K., Posadas, A.B., Ren, Y., Wu, X., Vasudevan, R.K., Okatan, M.B., Jesse, S., Aoki, T., McCartney, M.R., Smith, D.J., Kalinin, S.V., Lai, K., and Demkov, A.A.: Carrier density modulation in a germanium heterostructure by ferroelectric switching. Nat. Commun. 6, 6067 (2015).CrossRefGoogle Scholar
Fredrickson, K., Ponath, P., Posadas, A.B., McCartney, M.R., Aoki, T., Smith, D.J., and Demkov, A.A.: Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface. Appl. Phys. Lett. 104, 242908 (2014).CrossRefGoogle Scholar
McDaniel, M., Ngo, T.Q., Posadas, A., Hu, C., Lu, S., Smith, D.J., Yu, E.T., Demkov, A.A., and Ekerdt, J.G.: A chemical route to monolithic integration of crystalline oxides on semiconductors. Adv. Mater. Interfaces 1, 1400081 (2014).CrossRefGoogle Scholar
McDaniel, M., Hu, C., Lu, S., Ngo, T.Q., Posadas, A., Jiang, A., Smith, D.J., Yu, E.T., Demkov, A.A., and Ekerdt, J.G.: Atomic layer deposition of crystalline SrHfO3 directly on Ge(001) for high-k dielectric applications. Appl. Phys. Lett. 117, 054101 (2015).Google Scholar
Aoki, T., Lu, J., McCartney, M.R., and Smith, D.J.: Bright-field imaging of compound semiconductors using aberration-corrected scanning transmission electron microscopy. Semicond. Sci. Technol. (2016). doi: 10.1088/0268-1242/31/9/094002.CrossRefGoogle Scholar
Jia, C-L., Mi, S.B., Urban, K., Vrejoiu, I., Alexe, M., and Hesse, D.: Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films. Nat. Mater. 7, 57 (2008).CrossRefGoogle ScholarPubMed