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Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

Published online by Cambridge University Press:  31 January 2011

T. Ohnishi ,
B.T. Hang ,
X. Xu ,
M. Osada  and
K. Takada
T. Ohnishi*
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan; and Japan Science and Technology Agency, Core Research for Evolutional Science and Technology (JST-CREST), Saitama 332-0012, Japan
X. Xu
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
K. Takada
Affiliation:
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan; and Japan Science and Technology Agency, Core Research for Evolutional Science and Technology (JST-CREST), Saitama 332-0012, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

Keywords

Laser ablationIonic conductorCrystal growth
Type
Materials Communications
Information
Journal of Materials Research , Volume 25 , Issue 10 , October 2010 , pp. 1886 - 1889
Copyright
Copyright © Materials Research Society 2010

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References

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