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Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient

Published online by Cambridge University Press:  31 January 2011

Masayuki Okoshi ,
Hiroshi Kumagai  and
Koichi Toyoda
Masayuki Okoshi
Affiliation:
Laser Science Research Group, The Institute of Physical and Chemical Research, (Riken), 2–1 Hirosawa, Wako, Saitama 351–01, Japan
Hiroshi Kumagai
Affiliation:
Laser Science Research Group, The Institute of Physical and Chemical Research, (Riken), 2–1 Hirosawa, Wako, Saitama 351–01, Japan
Koichi Toyoda
Affiliation:
Laser Science Research Group, The Institute of Physical and Chemical Research, (Riken), 2–1 Hirosawa, Wako, Saitama 351–01, Japan
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Abstract

Carbon nitride thin films have been successfully deposited by ablating a graphite target (99.999%) in nitrogen gas ambient using the second (532 nm) or third (355 nm) harmonic of a Q-switched Nd : YAG laser. Carbon nitride films consisting of approximately 40% nitrogen were obtained at 7.5 × 10−3 Pa of nitrogen gas pressure using the third harmonic laser. The C–N chemical bond in the films was observed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Ellipsometric studies revealed that the refractive index of the fabricated films decreased with increasing nitrogen concentration.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 12 , December 1997 , pp. 3376 - 3379
Copyright
Copyright © Materials Research Society 1997

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