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The properties of W–C:H films deposited by reactive rf sputtering

Published online by Cambridge University Press:  31 January 2011

M. Wang
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich 1, Postfach 1913, Germany
K. Schmidt
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich 1, Postfach 1913, Germany
K. Reichelt
Affiliation:
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich 1, Postfach 1913, Germany
X. Jiang
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik (IST), Vogt-Kölln-Straβe 30, W-2000 Hamburg 54, Germany
H. Hübsch
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik (IST), Vogt-Kölln-Straβe 30, W-2000 Hamburg 54, Germany
H. Dimigen
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik (IST), Vogt-Kölln-Straβe 30, W-2000 Hamburg 54, Germany
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Abstract

Tungsten-containing amorphous hydrogenated carbon (W–C:H) films were prepared on silicon substrates by reactive rf sputtering (13.56 MHz). Elastic recoil detection (ERD) and Rutherford backscattering (RBS) of MeV He+ ions have been performed to determine the hydrogen concentration and mass density of the films, respectively. The mechanical properties, i.e., the microhardness, Young's modulus, and the adhesion on substrates, have been studied by depth-sensing indentation equipment (nanoindenter) and a scratch tester with an acoustic emission (AE) detector, respectively. The electric conductivity of the films was also measured. The results show that these properties depend mainly on the tungsten concentration. X-ray diffraction suggests that the W–C:H films consist of an a–C: H polymeric matrix with WC1−x(β) particles embedded. With increasing tungsten concentration the films change from polymeric a–C:H dominant to crystalline WC1−x(β) dominant W–C:H, resulting in different film properties.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

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