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Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

Published online by Cambridge University Press:  31 January 2011

C. R. Foschini ,
P. C. Joshi ,
J. A. Varela  and
S. B. Desu
C. R. Foschini
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061–0237
P. C. Joshi
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061–0237
J. A. Varela
Affiliation:
Instituto de Qu'mica, Universidade Estadual Paulista–UNESP–Araraquara, SP, Brazil 14801–970
S. B. Desu*
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061–0237
*
a)Address all correspondence to this author.
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Abstract

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1860 - 1864
Copyright
Copyright © Materials Research Society 1999

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References

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