Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-23T11:54:38.796Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of a-axis YBa2Cu3Ox epitaxial films using direct current-95 MHz hybrid plasma sputtering

Published online by Cambridge University Press:  03 March 2011

Wataru Ito
Wataru Ito
Affiliation:
Superconductivity Research Laboratory, ISTEC, 10-13 Shinonome 1 chome, Koto-Ku, Tokyo 135, Japan
Get access

Abstract

The dc-95 MHz hybrid plasma magnetron sputtering has been newly developed for obtaining a-axis oriented YBa2Cu3Ox (YBCO) films with an excellent crystallinity. The crystallinity was found to be the best among the films reported so far: the full width at half maximum value of 0.027°in the rocking curve measurement through the film (200) diffraction peak and Xmin of 2% estimated from the barium signal behind the surface peak in Rutherford backscattering (RBS) measurement using a 1 MeV He+ ion. The success in the excellent crystallinity was explained from the ion acceleration model at the ion sheath formed near the substrate surface considering the high ion density, which was revealed to be a characteristic of hybrid plasma. Almost perfect epitaxial growth was also confirmed by transmission electron microscopy. A characteristic grain boundary structure depending on the substrate was observed for the films on NdGaO3 and SrTiO3 substrates. Twist boundary is dominant for the film on NdGaO3, while symmetrical tilt boundary and basal-plane-faced tilt boundary exclusively exist for the film on SrTiO3. The microstructure of the film on SrTiO3 is very resistive against film relaxation. Strain relief was observed by RBS channeling spectra for the relatively high superconducting films. The results of Raman spectroscopy and RBS oxygen resonant measurements indicated that the oxygen content is not a critical parameter for determining the superconductivity of the a-axis oriented YBCO films, but oxygen ordering in the plane of the Cu-O chain and relief of the film strain are important for the improvement of Tc.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2216 - 2234
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Bednorz, J.G. and Müller, K.A., Z. Phys. B64, 189 (1986).CrossRefGoogle Scholar
2Takagi, H., Uchida, S., Kitazawa, K., and Tanaka, S., Jpn. J. Phys. 26, L123 (1987).CrossRefGoogle Scholar
3Chu, C.W., Hor, P.H., Meng, R.L., Gao, L., Huang, Z.J., Wang, Y.Q., Bechtold, J., Campbell, D., Wu, M. K., Ashburn, J. R., and Huang, C. Y., Phys. Rev. Lett. 58, 405 (1987).CrossRefGoogle Scholar
4Akimitu, J., Yamazaki, A., Sawa, H., and Fujiki, H., Jpn. J. Appl. Phys. 26, L2080 (1987).CrossRefGoogle Scholar
5Michel, C., Hervieu, M., Borel, M. M., Grandin, A., Deslandes, F., Provost, J., and Raveau, B., Z. Phys. B68, 421 (1987).CrossRefGoogle Scholar
6Maeda, H., Tanaka, Y., Fukutomi, M., and Asano, T., Jpn. J. Appl. Phys. 27, L209 (1988).CrossRefGoogle Scholar
7Sheng, Z.Z. and Herman, A.M., Nature 322, 55 (1988).CrossRefGoogle Scholar
8Schlom, D.G., Marshall, A.F., Sizemore, J.T., Chen, Z.J., Eckstein, J.N., Bozovic, I., VonDessonneck, K. E., Harris, J. S. Jr., and Bravman, J.C., J. Cryst. Growth 102, 361 (1990).CrossRefGoogle Scholar
9Katano, S., Funahashi, S., Hatano, T., Matsushita, A., Nakamura, K., Matsumoto, T., and Ogawa, K., Jpn. J. Appl. Phys. 26, L1049 (1987).CrossRefGoogle Scholar
10Izumi, F., Asano, H., Ishigaki, T., Takayama-Muromachi, E., Uchida, Y., and Watanabe, N., Jpn. J. Appl. 26, LI193 (1987).Google Scholar
11Selke, W. and Uimin, G. V., Physica C 214, 37 (1993).CrossRefGoogle Scholar
12Uimin, G. V., Gantmakher, V.F., Neminsky, A.M., Novomlinsky, L.A., Shovkun, D.V., and Brail, P., Physica C 192, 481 (1992).CrossRefGoogle Scholar
13lye, Y., Nakamura, S., Tamegai, T., Terashima, T., Yamamoto, K., and Bando, Y., Physica C 166, 62 (1990).Google Scholar
14Fujita, J., Yoshitake, T., Kamijo, A., Satoh, T., and Igarashi, H., J. Appl. Phys. 64, 1292 (1989).CrossRefGoogle Scholar
15Enomoto, Y., Murakami, T., Suzuki, M., and Moriwaki, K., Jpn. J. Appl. Phys. 26, L1248 (1987).CrossRefGoogle Scholar
16Mukaida, M. and Miyazawa, S., Jpn. J. Appl. Phys. 32, 4521 (1993).CrossRefGoogle Scholar
17Remmel, J., Geerk, J., Linker, G., Meyer, O., Wang, R.L., and Wolf, Th., Nucl. Instrum. Methods B64, 174 (1992).Google Scholar
18Homma, N., Okayama, S., Takahashi, H., Yoshida, I., Morishita, T., and Tanaka, S., Appl. Phys. Lett. 59, 1383 (1991).CrossRefGoogle Scholar
19Homma, N., Takahashi, H., Okayama, S., Morishita, T., and Tanaka, S., J. Mater. Res. 7, 813 (1992).CrossRefGoogle Scholar
20Kuypers, A.D. and Hopman, H.J., J. Appl. Phys. 67, 1229 (1990).CrossRefGoogle Scholar
21Ohya, K., Ishida, K., and Mori, I., Jpn. J. Appl. Phys. 23, 1640 (1984).CrossRefGoogle Scholar
22Terada, N., Jo, M., Hirabayashi, M., Kimura, Y., Matsutani, K., Hirata, K., Ohno, E., Sugise, R., and Kawashima, F., Jpn. J. Appl. Phys. 27, 639 (1988).CrossRefGoogle Scholar
23Tominaga, K., Iwamura, S., Shintani, Y., and Tada, O., Jpn. J. Appl. Phys. 21, 688 (1982).Google Scholar
24Selinder, T. I., Larsson, G., and Helmersson, U., J. Appl. Phys. 69, 390 (1991).CrossRefGoogle Scholar
25Krumme, J-P., Hack, R. A. A., and Raaijmakers, I. J. M. M., J. Appl. Phys. 70, 6743 (1991).CrossRefGoogle Scholar
26Li, H. C., Linker, G., Ratzel, F., Smithey, R., and Geerk, J., Appl. Phys. Lett. 52, 1098 (1988).CrossRefGoogle Scholar
27Migliuolo, M., Belan, R. M., and Brewer, J.A., Appl. Phys. Lett. 56, 2572 (1990).CrossRefGoogle Scholar
28Eom, C. B., Sun, J.Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S.M., Bravman, J. C., Geballe, T.H., Laderman, S.S., Taber, R. C., and Jacowitz, R. D., Physica C 171, 354 (1990).CrossRefGoogle Scholar
29Xi, X.X., Linker, G., Meyer, O., Nold, E., Obst, B., Ratzel, F., Smithey, R., Strehlau, B., Weschenfelder, F., and Geerk, J., Z. Phys. B 74, 13 (1989).CrossRefGoogle Scholar
30Hoshi, Y., Naoe, M., and Yamanaka, S., Jpn. J. Appl. Phys. 16, 1715 (1977).CrossRefGoogle Scholar
31Ohmi, T., Ichikawa, T., Iwabuchi, H., and Shibata, T., J. Appl. Phys. 66, 4756 (1989).CrossRefGoogle Scholar
32Ohmi, T., Kuwabara, H., Shibata, T., and Kiyota, T., Proceedings of the first international symposium on ultra large scale integration science and technology, 1987 (The Electrochemical Society, Pennington, NJ), p. 574.Google Scholar
33Johnson, B.R., Beauchamp, K.M., Wang, T., Liu, J-X., McGreer, K.A., Wan, J-C., Tuominen, M., Zhang, Y-J., Mecartney, M. L., and Goldman, A.M., Appl. Phys. Lett. 56, 1911 (1990).CrossRefGoogle Scholar
34Ito, W., Oishi, A., Okayama, S., Yoshida, Y., Homma, N., and Morishita, T., Physica C 204, 295 (1993).CrossRefGoogle Scholar
35Stoffel, N. G., Morris, P. A., Bonner, W. A., and Wilkens, B. J., Phys. Rev. B 37, 2297 (1988).CrossRefGoogle Scholar
36Myoren, H., Harada, K., Miyamoto, A., Miyamoto, N., and Osaka, Y., Jpn. J. Appl. Phys. 30, 3896 (1991).CrossRefGoogle Scholar
37Li, Q., Meyer, O., Xi, X. X., Geerk, J., and Linker, G., Appl. Phys. Lett. 55, 310 (1989).CrossRefGoogle Scholar
38Zheng, J. Q., Wang, X. K., Shih, M. C., Williams, S., So, J., Lee, S. J., Dutta, P., Chang, R.P.H., and Ketterson, J.B., Appl. Phys. Lett. 58, 2303 (1991).CrossRefGoogle Scholar
39Godyak, V.A., Piejak, R. B., and Alexandrovich, B.M., J. Appl. Phys. 73, 3657 (1993).CrossRefGoogle Scholar
40Godyak, V.A. and Piejak, R.B., Phys Rev. Lett. 65, 996 (1990).CrossRefGoogle Scholar
41Koenig, H.R. and Maissel, L.I., IBM, J. Res. Develop. 14, 168 (1970).CrossRefGoogle Scholar
42J. R. Cameron, Phys. Rev. 90, 839 (1953), or see, for example, the following:Chu, W. K., Mayer, J. W., and Nicolet, M. A., Backscattering Spectrometry (Academic Press, Boston, San Diego, New York, London, Sydney, Tokyo, Toronto, 1978).CrossRefGoogle Scholar
43Meyer, O., Weschenfelder, F., Xi, X.X., Xiong, G.C., Linker, G., and Geerk, J., Nucl. Instrum. Methods B35, 292 (1987).Google Scholar
44Streiffer, S. K., Lairson, B. M., Zielinski, E. M., and Bravman, J. C., Phys. Rev. B 47, 11, 431 (1993).Google Scholar
45Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Kamigaki, K., and Terauchi, H., Phys. Rev. Lett. 65, 2684 (1990).CrossRefGoogle Scholar
46Hamet, J.F., Mercey, B., Hervieu, M., Poullain, G., and Raveau, B., Physica C 198, 293 (1992).CrossRefGoogle Scholar
47Eom, C.B., Marshall, A.F., Laderman, S.S., Jacowitz, R.D., and Geballe, T.H., Science 249, 1549 (1990).CrossRefGoogle Scholar
48Marshall, A.F., and Eom, C.B., Physica C 207, 239 (1993).CrossRefGoogle Scholar
49Homma, N., Okayama, S., Takahashi, H., Kawamoto, S., Yoshida, I., Kamei, M., Morishita, T., Haga, T., and Yamaya, K., Physica C 194, 430 (1992).CrossRefGoogle Scholar
50Takahashi, H., Ohata, K., and Morishita, T., Physica C 201, 273 (1992).CrossRefGoogle Scholar
51Ramesh, R., Chang, C. C., Ravi, T. S., Hwang, D. M., Inam, A., Xi, X. X., Li, Q., Wu, X. D., and Venkatesan, T., Appl. Phys. Lett. 57, 1064 (1990).CrossRefGoogle Scholar
52Basu, S.N., Carim, A.H., and Mitchell, T.E., J. Mater. Res. 6, 1823 (1991).CrossRefGoogle Scholar
53Hamet, J.F., Blanc-Guilhon, B., Taffin, A., Mercey, B., Hervieu, M., and Raveau, B., Physica C 214, 55 (1993).CrossRefGoogle Scholar
54Takahashi, H., Homma, N., Okayama, S., and Morishita, T., Physica C 193, 385 (1992).CrossRefGoogle Scholar
55Muller, J-H., Gruehn, R., and Ginsbach, A., Physica C 210, 173 (1993).CrossRefGoogle Scholar
56Scherer, T., Marienhoff, P., Herwig, R., Neuhaus, M., and Jutzi, W., Physica C 197, 79 (1992).CrossRefGoogle Scholar
57Sasaura, M., Miyazawa, S., and Mukaida, M., J. Appl. Phys. 68, 3643 (1990).Google Scholar
58Young, K.H. and Sun, J.Z., Appl. Phys. Lett. 59, 2448 (1991).CrossRefGoogle Scholar
59Mukaida, M. and Miyazawa, S., Jpn. J. Appl. Phys. 31, 3317 (1992).CrossRefGoogle Scholar
60Mukaida, M. and Miyazawa, S., Appl. Phys. Lett. 63, 999 (1993).CrossRefGoogle Scholar
61Sun, B. N., Hartman, P., Woensdregt, C. F., and Schmid, H., J. Cryst. Growth 100, 605 (1990).CrossRefGoogle Scholar
62Sodtke, E. and Miinder, H., Appl. Phys. Lett. 60, 1630 (1992).CrossRefGoogle Scholar
63Yeh, J-J., Hong, M., and Felder, R.J., Appl. Phys. Lett. 54, 1163 (1989).CrossRefGoogle Scholar
64Ito, W., Mahajan, S., Yoshida, Y., Watanabe, N., and Morishita, T., J. Mater. Res. 9, 1625 (1994).CrossRefGoogle Scholar
65Pennycook, S.J., Chisholm, M. F., Jesson, D. E., Feenstra, R., Zhu, S., Zheng, X.Y., and Lowndes, D.J., Physica C 202, 1 (1992).CrossRefGoogle Scholar
66Kamei, M., Yoshida, I., Morishita, T., and Tanaka, S., Physica C 182, 123 (1991).CrossRefGoogle Scholar
67Burns, G., Dacol, F. H., Feild, C., and Holtzberg, F., Solid State Commun. 77, 367 (1991).CrossRefGoogle Scholar
68Iliev, M., Thomsen, C., Hadjiev, V., and Cardona, M., Phys. Rev. B 47, 12341 (1993).CrossRefGoogle Scholar
69Huong, P. V., Bruyere, J. C., Bustarret, E., and Granchamp, P., Solid State Commun. 72, 191 (1989).CrossRefGoogle Scholar
70Sodtke, E., Miinder, H., and Braginski, A. I., Physica C 204, 375 (1993).CrossRefGoogle Scholar