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Preparation and Microstructure Evolution of Both Freestanding and Supported TiO2 Thin Films

Published online by Cambridge University Press:  31 January 2011

Chen-Lung Fan ,
Daniel Ciardullo ,
Jay Paladino  and
Wayne Huebner
Chen-Lung Fan
Affiliation:
Ceramic Engineering Department, University of Missouri—Rolla, Rolla, Missouri 65401
Daniel Ciardullo
Affiliation:
Ceramic Engineering Department, University of Missouri—Rolla, Rolla, Missouri 65401
Jay Paladino
Affiliation:
Ceramic Engineering Department, University of Missouri—Rolla, Rolla, Missouri 65401
Wayne Huebner
Affiliation:
Ceramic Engineering Department, University of Missouri—Rolla, Rolla, Missouri 65401
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Abstract

Thin films of TiO2 were fabricated by spin-coating silicon wafers and cover glass with a titanium citrate complex precursor. The grain growth and phase development of both freestanding and supported films were studied using a combination of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. Freestanding films prepared at 400 °C possess only the anatase phase, while supported films treated under the same conditions formed a small amount of the rutile phase. After heat treatment at various temperatures, results indicated that porosity was introduced into the films when the grain size grew close to the film thickness. Grain growth studies show that the grain size of the freestanding film underwent a drastic increase during the transformation from anatase to rutile. The grain size of the supported films did not show an abrupt change upon heat treatment. The grain size of the freestanding films treated at 900 °C was approximately three times larger than that of the supported films.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1520 - 1528
Copyright
Copyright © Materials Research Society 2002

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References

1.Micheli, A.L., Am. Ceram. Soc. Bull. 63, 694 (1984).Google Scholar
2.Harris, L.A., J. Electrochem. Soc. 127, 2657 (1980).CrossRefGoogle Scholar
3.Sheppard, L.M., Adv. Mater. Process. 9, 19 (1986).Google Scholar
4.Birkefeld, L.D., Azad, A.M., and Akbar, S.A., J. Am. Ceram. Soc. 75, 2964 (1992).CrossRefGoogle Scholar
5.Larbot, A., Fabre, J-P., Guizard, C., and Cot, L., J. Am. Ceram. Soc. 72, 257 (1989).CrossRefGoogle Scholar
6.Rashti, M.A. and Brodie, D.E., Thin Solid Films 240, 163 (1994).Google Scholar
7.Krishna, M. Ghanashyam, Rao, K. Narasimha, and Mohan, S., J. Appl. Phys. 73, 434 (1993).CrossRefGoogle Scholar
8.Suhail, M.H., G. Mohan Rao, and S. Mohan, J. Appl. Phys . 71, 1421 (1992).CrossRefGoogle Scholar
9.Pongratz, S. and Zoller, A., J. Vac. Sci. Technol., A 10, 1897 (1992).CrossRefGoogle Scholar
10.Atanassov, G., Thielsch, R., and Popov, D., Thin Solid Films 223, 288 (1993).CrossRefGoogle Scholar
11.Meng, L-j., Andritschky, M., and Santos, M.P. dos, Thin Solid Films 223, 242 (1993).Google Scholar
12.Meng, L-j. and Santos, M.P. dos, Thin Solid Films 226, 22 (1993).CrossRefGoogle Scholar
13.Meng, L-j. and Santos, M.P. dos, Appl. Surf. Sci. 68, 319 (1993).CrossRefGoogle Scholar
14.Vorotilov, K.A., Orlova, E.V., and Petrovsky, V.I., Thin Solid Films 207, 180 (1992).CrossRefGoogle Scholar
15.Hsu, L.S., Rujkorakarn, R., Sites, J.R., and She, C.Y., J. Appl. Phys. 59, 3475 (1986).CrossRefGoogle Scholar
16.Fan, C.L. and Huebner, W., IEEE Symposium on Application of Ferroelectrics (IEEE, Piscataway, NJ, 1994).Google Scholar
17.Fan, C.L., Ph.D. Thesis (1995).Google Scholar
18.Keddie, J.L., Braun, P.V., and Giannelis, E.P., J. Am. Ceram. Soc. 77, 1592 (1994).CrossRefGoogle Scholar
19.Keddie, J.L. and Giannelis, E.P., In Better Ceramics Through Chemistry IV (Mater. Res. Soc. Symp. Proc. 180, Pittsburgh, PA, 1990), edited by Zelinsky, B.J.J., Clark, D.E., and Ulrich, D.R., pp. 425–428.Google Scholar
20.Lee, S.Y., Hummel, R.E., and DeHoff, R.T., Thin Solid Films 149, 29 (1987).CrossRefGoogle Scholar
21.Hummel, R.E., DeHoff, R.T., Matts-Goho, S., and Goho, W.M., Thin Solid Films 78, 1 (1981).CrossRefGoogle Scholar
22.Sharma, S.K. and Spitz, J., Thin Solid Films 65, 335 (1980).CrossRefGoogle Scholar
23.Miller, K.T., Lange, F.F., and Marshall, D.B., J. Mater. Res. 5, 151 (1990).CrossRefGoogle Scholar
24.Srolovitz, D.J. and Safran, S.A., J. Appl. Phys. 60, 247 (1986).CrossRefGoogle Scholar
25.Srolovitz, D.J. and Safran, S.A., J. Appl. Phys. 60, 255 (1986).CrossRefGoogle Scholar
26.Gao, Y., Merkle, K.L., Chang, H.L., Zhang, T.J., and Lam, D.L., Philos. Mag., A 65, 1103 (1992).CrossRefGoogle Scholar
27.Bordia, R.K. and Jagota, A., J. Am. Ceram. Soc. 76, 2475 (1993).CrossRefGoogle Scholar
28.Ocana, M., Garcia-Romos, J.V., and Serna, C.J., J. Am. Ceram. Soc. 75, 2010 (1992).CrossRefGoogle Scholar