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Preparation and Characterization of Pb(Zr, Ti)O3 Thin Films by Metalorganic Chemical vapor Deposition Using a Solid Delivery System

Published online by Cambridge University Press:  31 January 2011

Eunki Hong ,
Ju Cheol Shin ,
Jaeho Choi ,
Cheol Seong Hwang  and
Hyeong Joon Kim
Eunki Hong
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Ju Cheol Shin
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Jaeho Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Cheol Seong Hwang
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

Pb(Zr, Ti)O3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition using solid delivery system. The effects of deposition parameters such as the substrate temperature, the concentration of Pb precursor in the precursor mixtures, and the reactor pressure on the structural and electrical properties of PZT thin films were investigated. To obtain single-phase PZT thin films, the optimal range of the substrate temperature should be between 600 and 650 °C. The PbO content in PZT thin films was proportional to the fraction of Pb in the precursor mixture below 550 °C, but it was independent of the fraction of Pb in the mixture above 600 °C. With the increment of the reactor pressure, Zr contents in PZT thin films were increased, and the Pb/(Zr + Ti) ratio became more stoichiometric so that the ferroelectric properties were improved.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 6 , June 2000 , pp. 1284 - 1290
Copyright
Copyright © Materials Research Society 2000

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References

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