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Precipitates in GaN epilayers grown on sapphire substrates

Published online by Cambridge University Press:  31 January 2011

Junyong Kang  and
Tomoya Ogawa
Junyong Kang
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan, and Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
Tomoya Ogawa
Affiliation:
Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
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Abstract

Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2100 - 2104
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).CrossRefGoogle Scholar
2.Nakamura, S., Jpn. J. Appl. Phys. 10A, L1705 (1991).CrossRefGoogle Scholar
3.Uchida, K., Watanabe, A., Yano, F., Kouguchi, M., Tanaka, T., and Minagawa, S., J. Appl. Phys. 79, 3487 (1996).CrossRefGoogle Scholar
4.Lester, S. D., Ponce, F. A., Craford, M. G., and Steigewald, D. A., Appl. Phys. Lett. 66, 1249 (1995).CrossRefGoogle Scholar
5.Qian, W., Skowronski, M., De Graef, M., Doverspike, K., Rowland, L. B., and Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).CrossRefGoogle Scholar
6.Ning, X. J., Chieng, F. R., Pirouz, P., Yang, J., and Khan, M. A., J. Mater. Res. 11, 580 (1996).CrossRefGoogle Scholar
7.Wu, X. H., Brown, L.M., Kapolnek, D., Keller, S., Keller, B., Denbaars, S. P., and Speck, J. S., J. Appl. Phys. 80, 3228 (1996).CrossRefGoogle Scholar
8.Qian, W., Rohrer, G. S., Skowronski, M., Doverspike, K., Rowland, L. B., and Gaskill, D. K., Appl. Phys. Lett. 67, 2284 (1995).CrossRefGoogle Scholar
9.Vennegues, P., Beaumont, B., Vaille, M., and Gibart, P., Appl. Phys. Lett. 70, 2434 (1997).CrossRefGoogle Scholar
10.Liliental-Weber, Z., Chen, Y., Ruvimov, S., and Washburn, J., Phys. Rev. Lett. 79, 2835 (1997).CrossRefGoogle Scholar
11.Kang, J. and Ogawa, T., Appl. Phys. Lett. 71, 2304 (1997).CrossRefGoogle Scholar
12.Goldstein, J. I., Newbury, D. E., Echlin, P., Joy, D. C., Fiori, C., and Lifshin, E., Scanning Electron Microscopy and X-ray Microanalysis (Plenum Press, New York, 1981), Chaps. 4 and 5.CrossRefGoogle Scholar
13.Sverdlov, B. N., Martin, G. A., Morkoc, H., and Smith, D. J., Appl. Phys. Lett. 67, 2063 (1995).CrossRefGoogle Scholar
14.Romano, L. T., Northrup, J. E., and O'Keefe, M. A., Appl. Phys. Lett. 69, 2394 (1996).CrossRefGoogle Scholar
15.Larche, F. C., Dislocations in Solids, edited by Nabarro, F. R. N. (North-Holland Publishing Company, Amsterdam, 1979), Vol. 4, Chap. 14.Google Scholar
16.Mattial, T. and Nieminen, R. M., Phys. Rev. B 54, 16 676 (1996).CrossRefGoogle Scholar
17.Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 19, 2395 (1980).CrossRefGoogle Scholar
18.Glaser, E. R., Kennedy, T. A., Doverspike, K., Rowland, L. B., Gaskill, D. K., Freitas, J. A., Jr., Khan, M. Asif, Olson, D. T., Kuznia, J. N., and Wickenden, D. K., Phys. Rev. B 51, 13 326 (1995).CrossRefGoogle Scholar
19.Hofmann, D. M., Kovalev, D., Steude, G., Mever, B. K., Hoffmann, A., Eckev, L., Heitz, R., Detchprom, T., Amano, H., and Akasaki, I., Phys. Rev. B 52, 16 702 (1995).CrossRefGoogle Scholar
20.Calleja, E., Sanchez, F. J., Basak, D., Sanchez-Garcia, M. A., Munoz, E., Izpura, I., Calle, F., Tijero, J. M. G., Sanchez-Roias, J. L., Beaumont, B., Lorenzini, P., and Gibart, P., Phys. Rev. B 55, 4689 (1997).CrossRefGoogle Scholar
21.Chen, H. M., Chen, Y. F., Lee, M. C., and Feng, M. S., Phys. Rev. B 56, 6942 (1997).CrossRefGoogle Scholar
22.Chung, B-C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992).CrossRefGoogle Scholar
23.Zolper, J. C., Wilson, R. G., Pearton, S. J., and Stall, R. A., Appl. Phys. Lett. 68, 1945 (1996).CrossRefGoogle Scholar