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A polycrystalline SiC-on-Si architecture for capacitive pressure sensing applications beyond 400 °C: Process development and device performance

Published online by Cambridge University Press:  16 August 2012

Jiangang Du  and
Christian A. Zorman
Jiangang Du
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106
Christian A. Zorman*
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

To overcome the low fabrication yield associated with single crystalline 3C–SiC diaphragm-based high temperature capacitive pressure sensors fabricated by wafer bonding, we have developed an alternative based on a polycrystalline SiC-on-Si architecture. The capacitive pressure sensing element, i.e., a thin film diaphragm, was fabricated using low stress and high conductivity low-pressure chemical vapor deposition poly-SiC thin films, and the sensing architecture was formed by wafer bonding a poly-SiC film to a Si substrate using phosphosilicate glass bonding films. With a geometric aspect ratio of up to 800:1 and a maximum deflection load eight times or more to their thickness, the poly-SiC diaphragm-based sensors presented repeatable pressure sensing characteristics up to 500 °C.

Keywords

poly-SiCwafer bondingmicromachininghigh temperature pressure sensor,
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 120 - 128
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Krotz, G., Legner, W., Wagner, C., Moller, H., Sonntag, H., and Muller, G.: Silicon carbide as a mechanical material. Transducers 95, 186 (1995).Google Scholar
Mehregany, M.: Silicon carbide for microelectromechanical systems. Int. Mater. Rev. 45, 85 (2000).Google Scholar
Tong, L., Mehregany, M., and Matus, L.G.: Silicon carbide as a new micromechanics material. IEEE Solid-State Sens. Actuators 198 (1992).Google Scholar
National Research Council: Materials for High-Temperature Semiconductor Devices (National Academy Press, Washington, DC, 1995).Google Scholar
Ned, A.A., Okojie, R.S., and Kurtz, A.D.: 6H-SiC pressure sensor operation at 600 °C. HITEC 257 (1998).Google Scholar
Okojie, R.S., DeLaat, J.C., and Saus, J.R.: SiC pressure sensor for detection of combustor thermoacoustic instabilities [aircraft engine applications]. In 13th International Conference on Solid-State Sensors, Actuators. and Microsystems, (IEEE, Piscataway, NJ, 2005); p. 470.Google Scholar
Okojie, R.S., Ned, A.A., and Kurtz, A.D.: Operation of α (6H)-SiC pressure sensor at 500 °C. Sens.Actuators, A 66, 200 (1998).Google Scholar
Okojie, R.S., Ned, A.A., Kurtz, A.D., and Carr, W.N.: α(6H)-SiC pressure sensors at 350 °C. Int. Electron. Devices Meetings 525 (1996).Google Scholar
Wu, C-H., Stefanescu, S., Kuo, H-I., Zorman, C.A., Mehregany, M., and Obermeier, E.: Fabrication and testing of single crystalline 3C-SiC piezoresistive pressure sensors. In International Conference on Solid State Sensors and Actuators, (Springer, New York, NY, 2001); p. 514.Google Scholar
Hammerschmidt, D., Schnatz, F.V., Brockherde, W., Hosticka, B.J., and Obermeier, E.: A CMOS piezoresistive pressure sensor with on-chip programming and calibration. In IEEE International Solid-State Circuits Conference, (IEEE, Piscataway, NJ, 1993); p. 128.Google Scholar
Shor, J.S., Bemis, L., and Kurtz, A.D.: Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements. IEEE Trans. Electron. Devices 41, 661 (1994).Google Scholar
Shor, J.S., Goldstein, D., and Kurtz, A.D.: Characterization of n-type β-SiC as a piezoresistor. IEEE Trans. Electron. Devices 40, 1093 (1993).Google Scholar
Wu, C.H., Zorman, C.A., and Mehregany, M.: Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications. IEEE Sens. J. 6, 316 (2006).Google Scholar
Ko, W.H. and Wang, Q.: Touch mode capacitive pressure sensors. Sens. Actuators, A 75, 242 (1999).Google Scholar
Ko, W.H., Wang, Q., and Wang, Y.: Touch mode capacitive pressure sensors for industrial applications. In Solid-State Sensors and Actuators Workshop, (IEEE, Piscataway, NJ, 1996); p. 244.Google Scholar
Fonseca, M.A., English, J.M., von Arx, M., and Allen, M.G.: Wireless micromachined ceramic pressure sensor for high-temperature applications. J. Microelectromech. Syst. 11, 337 (2002).Google Scholar
Young, D.J., Du, J., Zorman, C.A., and Ko, W.H.: High-temperature single-crystal 3C-SiC capacitive pressure sensor. IEEE Sensors J. 4, 464 (2004).Google Scholar
Du, J., Ko, W.H., Mehregany, M., and Zorman, C.A.: Poly-SiC capacitive pressure sensors made by wafer bonding. In IEEE Conference on Sensors, (IEEE, Piscataway, NJ, 2005); p. 1268.Google Scholar
Chen, L. and Mehregany, M.: A silicon carbide capacitive pressure sensor for high temperature and harsh environment applications. In Transducers’ 2007, (IEEE, Piscataway, NY, 2007); p. 2597.Google Scholar
Chen, L. and Mehregany, M.: A silicon carbide capacitive pressure sensor for in-cylinder pressure measurement. Sens. and Act. A (Phy.) 145–146, 2 (2008).Google Scholar
Wang, Q.: Touch mode capacitive pressure sensors and interface circuits. Ph.D. Dissertation, Case Western Reserve University, Cleveland, 1998.Google Scholar
Eaton, W.P., Bitsie, F., Smith, J.H., and Plummer, D.W.: A new analytical solution for diaphragm deflection and its application to a surface-micromachined pressure sensor. In Proceedings International Conference on Modeling and Simulation of. Microsystems, Semiconductors, Sensors and Actuators, (Nano Science and Technology Institute, Danville, CA, 1999); p. 640.Google Scholar
Timoshenko, S.: Theory of Plates and Shells (McGraw-Hill, Columbus, OH, 1959).Google Scholar
Dunning, J.L.: Development of low-stress, undoped poly-SiC films in a large-scale LPCVD furnace using gas flow as a controlling parameter. M.S. Thesis, Case Western Reserve University, Cleveland, 2005.Google Scholar
Trevino, J., Xiao-An, F., Mehregany, M., and Zorman, C.: Low-stress, heavily-doped polycrystalline silicon carbide for MEMS applications. In MEMS’ 2005, (IEEE, Piscataway, NJ, 2005); p. 451.Google Scholar
Tong, Q.-Y., Gosele, U., Yuan, C., Steckl, A.J., and Reiche, M.: Silicon carbide wafer bonding. J. Electrochem. Soc. 142, 232 (1995).CrossRefGoogle Scholar
Kern, W. and Schnable, G.L.: Chemically vapor-deposited borophosphosilicate glasses for silicon device applications. RCA Rev. 43, 423 (1982).Google Scholar
Yang, : MOS capacitance measurements for high-leakage thin dielectrics. IEEE Trans. Electron. Devices 46, 1500 (1999).CrossRefGoogle Scholar