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Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

Published online by Cambridge University Press:  01 July 2006

Maria Losurdo ,
Maria M. Giangregorio ,
A. Sacchetti ,
Pio Capezzuto ,
Giovanni Bruno ,
Graziella Malandrino  and
Ignazio L. Fragalà
Maria Losurdo*
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Maria M. Giangregorio
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
A. Sacchetti
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Pio Capezzuto
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Giovanni Bruno
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Graziella Malandrino
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, I-95125 Catania, Italy
Ignazio L. Fragalà
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, I-95125 Catania, Italy
*
a) Address all correspondence to this author.e-mail: [email protected] This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Fall Meeting Symposium FF Proceedings, Vol. 892.
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Abstract

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.

Keywords

Metallorganic depositionPlasma-enhanced CVDZn
Type
Outstanding Meeting Papers
Information
Journal of Materials Research , Volume 21 , Issue 7 , July 2006 , pp. 1632 - 1637
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1.Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., Steiner, T.: Recent progress in processing and properties of ZnO. Prog. Mater. Sci. 50, 293 (2005).Google Scholar
2.Robbins, J.J., Harvey, J., Leaf, J., Fry, C., Wolden, C.A.: Transport phenomena in high performance nanocrystalline ZnO:Ga films deposited by plasma enhanced chemical vapor deposition. Thin Solid Films 473, 35 (2005).Google Scholar
3.CRC Handbook of Chemistry and Physics 57th ed; edited by Weast, R.C. (CRC Press, Cleveland, OH, 1976–1977), p. F-224.Google Scholar
4.Malandrino, G., Blandino, M., Perdicaro, L.M.S., Fragalà, I.L., Rossi, P., Dapporto, P.: A novel diamine adduct of zinc bis(2-thenoyl-trifluoroacetonate) as a promising precursor for MOCVD of zinc oxide films. Inorg. Chem. 44, 9684 (2005).Google Scholar
5.Hitchman, M.L., Shamlian, S.H., Gilliland, D.C., Cole-Hamilton, D., Nash, J.A.P., Thompson, S.C., Cook, S.L.: Reproducible MOCVD of barium fluoride: Studies of the effect of the degree of precursor crystallinity and purity. J. Mater. Chem. 5, 47 (1995).CrossRefGoogle Scholar
6.Cho, M.W., Setiawan, A., Ko, H.J., Hong, S.K., Yao, T.: ZnO epitaxial layers grown on c-sapphire substrate via MgO buffer by plasma assisted molecular beam epitaxy. Semicond. Sci. Technol. 20, S13 (2005).Google Scholar
7.Bruggemann, D.A.G.: Effective medium approximation. Ann. Phys. (Leipzig) 24, 636 (1965).Google Scholar
8.Adachi, S.: Optical Constants of Crystalline and Amorphous Semiconductors (Kluwer Academic Publishers, Boston, MA, 1999), pp. 420–424.CrossRefGoogle Scholar
9.Dadgar, A., Poschenrieder, M., Reiher, A., Blasing, J., Christen, J., Krtschill, A., Finger, T., Hempel, T., Diez, A., Krost, A.: Reduction of stress at the initial stages of GaN growth on Si(111). Appl. Phys. Lett. 82, 28 (2003).CrossRefGoogle Scholar
10.Ploog, K.H., Brandt, O., Yang, H., Yang, B., Trampert, A.: Nucleation and growth of GaN layers on GaAs, Si and SiC substrates. J. Vac. Sci. Technol. B 16, 2229 (1998).Google Scholar
11.Nam, O.H., Bremser, M.D., Zheleva, T.S., Davis, R.F.: Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71, 2638 (1997).Google Scholar
12.Matsuda, A.: Growth mechanism of microcrystalline silicon obtained from reactive plasmas. Thin Solid Films 337, 1 (1999).Google Scholar