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Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

Published online by Cambridge University Press:  01 July 2006

Maria Losurdo*
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Maria M. Giangregorio
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
A. Sacchetti
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Pio Capezzuto
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Giovanni Bruno
Affiliation:
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126 Bari, Italy
Graziella Malandrino
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, I-95125 Catania, Italy
Ignazio L. Fragalà
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, I-95125 Catania, Italy
*
a) Address all correspondence to this author.e-mail: [email protected] This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Fall Meeting Symposium FF Proceedings, Vol. 892.
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Abstract

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.

Type
Outstanding Meeting Papers
Copyright
Copyright © Materials Research Society 2006

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References

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