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Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures

Published online by Cambridge University Press:  31 January 2011

W. Liu ,
M. F. Li ,
K. L. Teo ,
Nakao Akutsu  and
Koh Matsumoto
W. Liu
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering, The National University of Singapore, Singapore 119260
M. F. Li
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering, The National University of Singapore, Singapore 119260
K. L. Teo
Affiliation:
Center for Optoelectronics, Department of Electrical Engineering, The National University of Singapore, Singapore 119260
Nakao Akutsu
Affiliation:
Nippon Sanso Co., Tsukuba Laboratories, 10 Ohkubo Tsukuba, Ibaraki, 300-26, Japan
Koh Matsumoto
Affiliation:
Nippon Sanso Co., Tsukuba Laboratories, 10 Ohkubo Tsukuba, Ibaraki, 300-26, Japan
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Abstract

Room-temperature photovoltaic spectroscopy was applied to study undoped GaN, n-type GaN, and InGaN quantum well structures. Clear exciton absorption was observed in the photovoltaic spectra of the undoped GaN, and polarization measurements were made to identify the exciton absorption. For the n-type GaN sample, instead of the exciton absorption we observed only bulk absorption edge, which may be due to the free carrier screening effect. For the InGaN quantum well structures, the photovoltaic spectra showed relatively complicated line shape due to the overlap of the signals from different layers. By changing the reference phase of the lock-in amplifier, we were able to suppress some of the signals and thus identify the origin of the corresponding signal.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2794 - 2798
Copyright
Copyright © Materials Research Society 1999

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