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Photoluminescence investigation of CdZnTe:In single crystals annealed in CdZn vapors

Published online by Cambridge University Press:  01 July 2006

Ge Yang ,
Wanqi Jie  and
Qunying Zhang
Ge Yang*
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, People's Republic of China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, People's Republic of China
Qunying Zhang
Affiliation:
Beijing Power Machinery Research Institute, Beijing 100074, People's Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

Keywords

II-VIPhotoemission
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 7 , July 2006 , pp. 1807 - 1809
Copyright
Copyright © Materials Research Society 2006

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References

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