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Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

Published online by Cambridge University Press:  31 January 2011

Peir-Yung Chu ,
Isabelle Campion  and
Relva C. Buchanan
Peir-Yung Chu
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
Isabelle Campion
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
Relva C. Buchanan
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
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Abstract

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 11 , November 1992 , pp. 3065 - 3071
Copyright
Copyright © Materials Research Society 1992

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References

1Krishna, M. G., Narasimha, K., and Mohan, S., Thin Solid Films 193/194, 690 (1990).CrossRefGoogle Scholar
2Davison, W. W. and Buchanan, R. C., Advances in Ceramics, edited by Yan, M. F. (American Ceramic Society, Westerville, OH, 1989), Vol. 26, p. 513.Google Scholar
3Myoren, H., Nishiyama, Y., Fukumoto, H., Sasu, H., and Osaka, Y., Jpn. J. Appl. Phys. 28 (3), 351 (1989).CrossRefGoogle Scholar
4Sim, S. S., Chu, P-Y., Krabill, R. H., and Clark, D. E., Ultrastructure Processing of Advanced Ceramics, edited by Mackenzie, J. D. (John Wiley & Sons, New York, 1988), p. 995.Google Scholar
5Heuer, A. H. and Hobbs, L. W., Advances in Ceramics (American Ceramic Society, Westerville, OH, 1981), Vol. 3.Google Scholar
6Jones, F., J. Vac. Sci. Technol. A 6 (6), 3088 (1988).CrossRefGoogle Scholar
7Balog, M. and Schieber, M., Thin Solid Films 47, 109 (1977).CrossRefGoogle Scholar
8Sankur, H., DeNatale, J., Gunning, W., and Nelson, J. G., J. Vac. Sci. Technol. A 5 (5), 2869 (1987).CrossRefGoogle Scholar
9Rujkorakarn, R. and Sites, J. R., J. Vac. Sci. Technol. A 4 (3), 568 (1986).CrossRefGoogle Scholar
10Chu, P-Y. and Buchanan, R.C., J. Mater. Res. 6, 1736 (1991).CrossRefGoogle Scholar
11Garvie, R.C., J. Phys. Chem. 69 (4), 1238 (1965).CrossRefGoogle Scholar
12Mitsuhasi, T., Ichihara, M., and Tatsuke, U., J. Am. Ceram. Soc. 57 (2), 97 (1974).CrossRefGoogle Scholar
13Tani, E., Yoshimura, M., and Somiya, S., J. Am. Ceram. Soc. 66 (1), 11 (1983).CrossRefGoogle Scholar
14El-Shanshoury, I.A., Rudenko, V., and Ibrahim, I., J. Am. Ceram. Soc. 53, 264 (1970).CrossRefGoogle Scholar
15Adam, J. and Cox, B., J. Nucl. Energy A (11), 31 (1959).Google Scholar
16Howard, C. J., Hill, R.J., and Reichert, B.E., Acta Cryst. B44, 116 (1988).Google Scholar