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Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot

Published online by Cambridge University Press:  12 March 2019

Patrick G. Whiting ,
Kevin S. Jones ,
Karl D. Hirschman ,
Jayantha Senawiratne ,
Johannes Moll ,
Robert G. Manley ,
J. Gregory Couillard  and
Carlo A. Kosik Williams
Patrick G. Whiting*
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA
Kevin S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA
Karl D. Hirschman
Affiliation:
Department of Electrical Engineering, Rochester Institute of Technology, Henrietta, New York 14623, USA
Jayantha Senawiratne
Affiliation:
Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA
Johannes Moll
Affiliation:
Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA
Robert G. Manley
Affiliation:
Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA
J. Gregory Couillard
Affiliation:
Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA
Carlo A. Kosik Williams
Affiliation:
Sullivan Park Science and Technology Center, Corning Incorporated, Erwin, New York 14870, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross section of the trap that generated the signal via a variable, kO. This constant relates the carrier emission rates giving rise to the differential capacitance signal associated with a given trap at two different temperatures: the temperature at which the maximum differential capacitance is detected, and an arbitrary temperature at which some nonzero differential capacitance signal is detected. The extracted activation energy of the detected trap center is used along with the position of the peak maximum to extract the capture cross section of the trap center.

Keywords

deep level transient spectroscopy (DLTS)ion-implantationSi
Type
Article
Information
Journal of Materials Research , Volume 34 , Issue 10 , 28 May 2019 , pp. 1654 - 1668
Copyright
Copyright © Materials Research Society 2019 

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