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Oxygen Stoichiometry in PdOxand PdOx/Pt Electrode Layers During Processing of Ferroelectric and High-epsilon Perovskites

Published online by Cambridge University Press:  31 January 2011

K. L. Saenger ,
C. Cabral Jr ,
P. R. Duncombe ,
A. Grill  and
D. A. Neumayer
K. L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
C. Cabral Jr
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
P. R. Duncombe
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
A. Grill
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
D. A. Neumayer
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

High-epsilon (HE) and ferroelectric (FE) perovskites such as (Ba, Sr)TiO3 and SrBi2Ta2O9 are attracting substantial interest for use in dynamic random-access memory and nonvolatile memory. In this paper, we describe how an easily decomposable PdO bottom electrode layer may be used as a marker for possible HE/FE damage induced by exposure to reducing environments. Oxygen loss from PdO films with and without a HE/FE overlayer was monitored by in situ x-ray diffraction during heating in an inert ambient. Additional measurements were performed on PdO films in contact with Pt underlayers. A Pt underlayer was found to reduce the temperature of oxygen release from PdO, suggesting that it may be possible to custom-design PdO-based oxygen sources with specific oxygen release characteristics to resupply the HE/FE with oxygen lost during processing.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 4 , April 2000 , pp. 961 - 966
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. See, for example, Summerfelt, S.R., U.S. Patent No. 5 585 300 (17 December 1996).Google Scholar
2.Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Appl. Phys. Lett. 65, 1522 (1994).Google Scholar
3.Nakamura, T., Fujimori, Y., Izumi, N., and Kamisawa, A., Jpn. J. Appl. Phys. 37, 1325 (1998).CrossRefGoogle Scholar
4.Fujisawa, H., Hyodo, S., Jitsui, K., Shimizu, M., Niu, H., Okino, H., and Shiosaki, T., Integrated Ferroelectrics 21, 107 (1998).CrossRefGoogle Scholar
5.Joo, J.H., Jeon, Y.C., Seon, J.M., Oh, K.Y., Roh, J.S., and Kim, J.J., Jpn. J. Appl. Phys. 36, 4382 (1997).CrossRefGoogle Scholar
6.Fukuda, Y., Numata, K., Aoki, K., Nishimura, A., Fujihashi, G., Okamura, S., Ando, S., and Tsukamoto, T., Jpn. J. Appl. Phys. Lett. 37, L453 (1998).Google Scholar
7.Joo, J.H., Seon, J.M., Jeon, Y.C., Oh, K.Y., Roh, J.S., and Kim, J.J., Appl. Phys. Lett. 70, 3053 (1997).Google Scholar
8.Tsunemine, Y., Okudaira, T., Kashihar, K., Hanafusa, K., Yutani, A., Fujita, Y., Matsushita, M., Itoh, H., and Miyoshi, H., Proc. IEEE International Electron Devices Meeting Technical Digest 811 (1998).Google Scholar
9.Stephenson, G.B., Ludwig, K.F. Jr, Jordan-Sweet, J.L., Brauer, S., Mainville, J., Yang, Y.S., and Sutton, M., Rev. Sci. Instrum. 60, 1537 (1989).Google Scholar
10.Colgan, E.G., Clevenger, L.A., and Cabral, C. Jr, Appl. Phys. Lett. 65, 2009 (1994).CrossRefGoogle Scholar
11.Mittemeijer, E.J., Cheng, L., van der Schaaf, P.J., Brakman, C.M., and Korevaar, B.M., Metall. Trans. A 19A, 925 (1988);Google Scholar
Kissinger, H.E., Anal. Chem. 29, 1702 (1957).CrossRefGoogle Scholar
12.Handbook of Chemistry and Physics, 67th ed., edited by R.C. Weast (CRC Press, Boca Raton, FL, 1986).Google Scholar