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Oxidation of SiC powder by high-temperature, high-pressure H2O

Published online by Cambridge University Press:  03 March 2011

Masahiro Yoshimura ,
Jun-ichiro Kase  and
Shigeyuki Sōmiya
Masahiro Yoshimura
Affiliation:
Research Laboratory of Engineering Materials and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 227 Japan
Jun-ichiro Kase
Affiliation:
Research Laboratory of Engineering Materials and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 227 Japan
Shigeyuki Sōmiya
Affiliation:
Research Laboratory of Engineering Materials and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 227 Japan
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Abstract

The reaction between SiC powder and H2O has been studied at 400°–800 °C under 10 and 100 MPa. Silicon carbide reacted with H2O to yield amorphous SiO2 and CH4 by the reaction SiC + 2H2O→SiO2 + CH4 above 500 °C. Cristobalite and tridymite crystallized from amorphous silica after the almost complete oxidation of SiC above 700 °C. The oxidation rate, as calculated from the weight gain, increased with temperature and pressure. The Arrhenius plotting of the reaction rate based on a Jander-type model gave apparent activation energies of 167–194 kJ/mol. Contrasted with oxidation in oxidative atmosphere, oxidation in H2O is characterized by the diffusion of H2O and CH4 in an amorphous silica layer where the diffusion seemed to be rate determining. Present results suggest that the oxidation of SiC includes the diffusion process of H2O in silica layers when atmospheres contain water vapor.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 1 , February 1986 , pp. 100 - 103
Copyright
Copyright © Materials Research Society 1986

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References

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