Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-20T02:46:26.079Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation of Si implanted with nondopant, metallic ions

Published online by Cambridge University Press:  31 January 2011

O. W. Holland ,
C. W. White  and
S. J. Pennycook
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Get access

Abstract

The effect of implantation of low-solubility, metallic impurities into Si on the oxidation kineties in steam was studied. The list of impurities that were studied include Ti, Co, Ni, Fe, Yb, Pb, Sn, and Ag. Kinetic data from Pb+ -implanted Si is correlated with the impurity behavior during the oxidation. It will be shown that the oxidation rate is dependent both on the impurity segregation phenomena at the oxide/Si interface and on the nature of the ion-induced damage that is stable at the oxidation temperature. Also, it is shown that novel morphologies can develop in the Si substrate during oxidation. Transmission electron microscopy and Rutherford backscattering/channeling spectroscopy were used to characterize these structures. Mechanisms responsible for the morphological changes in the substrate during oxidation are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 5 , October 1988 , pp. 898 - 906
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Fathy, D., White, C. W., and Holland, O. W., in Proceedings of SPIE, Vol. 797, edited by Mukherjee, Sayan D. (SPIE, Bellingham, 1987), p. 83.Google Scholar
2Fathy, D., Holland, O. W., and White, C. W.,Appl. Phys. Lett. 51, 1337 (1987).CrossRefGoogle Scholar
3Holland, O. W., White, C. W., and Fathy, D., Appl. Phys. Lett. 51, 520 (1987).CrossRefGoogle Scholar
4Deal, B. E. and Grove, A. S., J. Appl. Phys. 36, 3770 (1965).CrossRefGoogle Scholar
5Deal, B. E. and Sklar, M., J. Electrochem. Soc. 112, 430 (1965).CrossRefGoogle Scholar
6Gotzlich, J. F., Haberger, K., Ryssel, H., Kranz, H., and Traumuler, E., Radiat. Eff. 47, 203 (1980).CrossRefGoogle Scholar
7Ho, C. P. and Plummer, J. D., J. Electrochem. Soc. 126, 1516 (1979).CrossRefGoogle Scholar
8Narayan, J., Holland, O. W., and Appleton, B. R., J. Vac. Sci. Technol. B 1, 871 (1983).CrossRefGoogle Scholar
9Boldyrev, V. P., Pokrovskii, I.I., Romanovskaya, S. G., Tkach, A. V., and Shimanovich, I. E., Fiz. Tekh. Poluprovodn. 11, 1199 (1977).Google Scholar
10Williams, J. S., Christodoulides, C. E., Grant, W. A., Andrew, R., Brawn, J. R., and Booth, M., Radiat. Eff. 32, 55 (1977).CrossRefGoogle Scholar
11Williams, J. S., Phys. Lett. A 51, 85 (1975).CrossRefGoogle Scholar
12Barrett, J. H., Phys. Rev. B 3, 1527 (1971).CrossRefGoogle Scholar
13Lindhard, J., Kgl. Danske Videnskab. Selskab, Mat.-Fys. Medd. 34, No. 14 (1965).Google Scholar
14Sunami, H., J. Electrochem. Soc. 125, 892 (1978).CrossRefGoogle Scholar
15Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 51, 342 (1980).CrossRefGoogle Scholar