Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-23T16:37:19.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Orientation of rf-sputter-deposited MoS2 films

Published online by Cambridge University Press:  31 January 2011

P. A. Bertrand
P. A. Bertrand
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, California 90009-2960
Get access

Abstract

A theory to predict the orientation of radio-frequency (rf) sputter-deposited MoS2 films with respect to the substrate surface is presented. Oxygen-containing species such as H2O and -OH are postulated to be active sites that force crystallites to form with their basal planes perpendicular to the surface. X-ray diffraction is used to determine the crystallite orientation in films deposited on smooth, rough, or oxidized Si surfaces, as well as on fused silica or gold surfaces. The results support the theory. To produce MoS2 films with their crystallite basal planes parallel to a substrate surface (which has been suggested to be the low friction orientation), the active sites must be removed from the substrate by, for instance, heating in vacuum.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 1 , February 1989 , pp. 180 - 184
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Fleischauer, P. D. and Bauer, R., ASLE Trans. 30 (2), 160 (1986).Google Scholar
2Fleischauer, P. D., ASLE Trans. 27 (1), 82 (1983).Google Scholar
3Buck, V., Thin Solid Films 139, 157 (1986).Google Scholar
4Wu, N. L. and Phillips, J., Surf. Sci. 184, 463 (1987).Google Scholar
5Lince, J. R. and Fleischauer, P. D., J. Mater. Res. 2, 827 (1987).Google Scholar
6Fleischauer, P. D., Thin Solid Films 154, 309 (1987).Google Scholar
7Koltsov, S.I., Krivlkin, A.N., and Gromov, V.K., Zh. Fiz. Khim. 61, 1101 (1987).Google Scholar
8Andriamanantenasoa, I., Lacharme, J. P., and Sebenne, C. A., J. Vac. Sci. Technol. A5 (4), 902 (1987).Google Scholar
9Fleischauer, P. D., Lince, J. R., Bertrand, P. A., and Bauer, R., Langmuir (to be published).Google Scholar