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Optical Characterization of GaAs/Si Layers Grown by the Conformal Method (Confined Lateral Epitaxial Growth)

Published online by Cambridge University Press:  31 January 2011

A. M. Ardila ,
O. Martínez ,
M. Avella ,
J. Jiménez ,
E. Gil-Lafon  and
B. Gérard
A. M. Ardila
Affiliation:
Departamento de FÁsica, Facultad de Ciencias, Universidad Nacional de Colombia, Ciudad Universitaria, Santa Fe de Bogotá, Colombia and Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Valladolid, Valladolid, 47011, Spain
O. Martínez
Affiliation:
Departamento de FÁsica de la Materia Condensada, ETSII, Universidad de Valladolid, Valladolid,47011, Spain
M. Avella
Affiliation:
Departamento de FÁsica de la Materia Condensada, ETSII, Universidad de Valladolid, Valladolid,47011, Spain
J. Jiménez*
Affiliation:
Departamento de FÁsica de la Materia Condensada, ETSII, Universidad de Valladolid, Valladolid,47011, Spain
E. Gil-Lafon
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 Aubiére Cedex, France
B. Gérard
Affiliation:
THALES, Corporate Research Laboratory, 91404 Orsay Cedex, France
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Optical studies of conformal GaAs layers grown on silicon substrates were carried out by cathodoluminescence, photoluminescence imaging, and micro-Raman spectroscopy. These techniques revealed, in the conformal GaAs layers, local variations of the luminescence intensity with the shape of stripes both parallel and perpendicular to the GaAs seed, associated with local variations of tensile stress. The cathodoluminescence and micro-Raman spectra suggest that this distribution of tensile stress plays an important role in the formation of mid-gap states responsible for the variations of the luminescence intensity. The high luminescence emission of the conformal GaAs layers compared to the emission of the GaAs seed grown directly on the Si substrate is consistent with the high quality of the conformal layers.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1341 - 1349
Copyright
Copyright © Materials Research Society 2002

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