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On diamond-hexagonal germanium

Published online by Cambridge University Press:  31 January 2011

S-Q. Xiao  and
P. Pirouz
S-Q. Xiao
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
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Abstract

Diamond-hexagonal (dh) Ge has been produced by Vickers micro-indentation of a Ge single crystal and investigated by high resolution transmission electron microscopy (HREM). The results are consistent with the mechanisms that have been proposed earlier for the generation of dh Si. The hexagonal phase of these elemental semiconductors may be produced by two related mechanisms: (a) secondary twinning or (b) the intersection of two twins. The hexagonal germanium produced by both of these mechanisms has been observed and is presented in the present paper.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 6 , June 1992 , pp. 1406 - 1412
Copyright
Copyright © Materials Research Society 1992

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References

1.Eremenko, V. G. and Nikitenko, V. I., Phys. Status Solidi (a) 14, 317 (1972).CrossRefGoogle Scholar
2.Tan, T. Y., Föll, H., and Hu, S. M., Philos. Mag. A 44, 127 (1981).CrossRefGoogle Scholar
3.Pirouz, P., Chaim, R., and Samuels, J., Proc. 5th Int. Congr. on The Structure and Properties of Dislocations in Semiconductors, Moscow, U.S.S.R., 1986; Izvestiya Nauk Akademiya S. S. S. R. 51, 753 (1987). In Russian.Google Scholar
4.Pirouz, P., Chaim, R., and Dahmen, U., in Defects in Electronic Materials, edited by Stavola, M., Pearton, S. J., and Davies, G. (Mater. Res. Soc. Symp. Proc. 104, Pittsburgh, PA, 1988), p. 133.Google Scholar
5.Pirouz, P., Chaim, R., Dahmen, U., and Westmacott, K. H., Acta Metall. Mater. 38, 313 (1990).CrossRefGoogle Scholar
6.Dahmen, U., Westmacott, K. H., Pirouz, P., and Chaim, R., Acta Metall. Mater. 38, 323 (1990).CrossRefGoogle Scholar
7.Pirouz, P., Dahmen, U., Westmacott, K. H., and Chaim, R., Acta Metall. Mater. 38, 329 (1990).CrossRefGoogle Scholar
8.Dahmen, U., Hetherington, C. J., Pirouz, P., and Westmacott, K. H., Scripta Metall. 23, 269 (1989).CrossRefGoogle Scholar
9.Pirouz, P., Yang, J., Ernst, F., and Möller, H-J., in High Resolution Microscopy of Materials, edited by Krakow, W., Ponce, F. A., and Smith, D. J. (Mater. Res. Soc. Symp. Proc. 139, Pittsburgh, PA, 1989), p. 199.Google Scholar
10.Cerva, H., J. Mater. Res. 6, 2324 (1991).CrossRefGoogle Scholar
11.Wegscheider, W., Eberl, K., Abstreiter, G., Cerva, H., and Oppolzer, H., in Microscopy of Semiconducting Materials 1991, edited by Cullis, A. G. and Long, N. J. (Inst. Phys. Conf. Ser. 117, Bristol, England, 1991), p. 21.Google Scholar
12.Eremenko, V. G., Sov. Phys. Solid State 17, 1647 (1976).Google Scholar
13.Cahn, R. W., Acta Metall. 1, 49 (1953).CrossRefGoogle Scholar
14.Mahajan, S. and Chin, G. Y., Acta Metall. 21, 173 (1973).CrossRefGoogle Scholar
15.Mahajan, S. and Chin, G. Y., Acta Metall. 22, 1113 (1973).CrossRefGoogle Scholar