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Nucleation in the multicrystalline Polix silicon ingot

Published online by Cambridge University Press:  31 January 2011

P. Andonov ,
P. Dervin  and
P. Lay
P. Andonov
Affiliation:
Laboratoire de Magnétisme, CNRS-Bellevue, 1, place Aristide Briand, 92195 Meudon Cedex, France
P. Dervin
Affiliation:
Laboratoire Léon Brillouin, CNRS-CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
P. Lay
Affiliation:
Photowatt Int. S. A., 6 Rue de la Girafe, BP. 5117, 14043 Caen Cedex, France
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Abstract

An analysis of nucleation from solid nuclei in Polix photovoltaic polycrystalline silicon is reported. The bulk texture is studied by neutron diffraction using a transmission method. The crystallographic orientation is determined for three adjacent samples along the growth axis in the lower central part of the ingot. The size and orientation of all crystallites are obtained in the domains showing different morphologies: a nucleation zone with equiaxed crystallites, an upper domain with columnar structure, and an intermediate part where both types of crystallization are present. The crystallites are counted in terms of their volume in the three parts. The mean grain size increases in the columnar domain, but a pronounced elimination of particular crystalline orientations is not observed as the morphology is changed.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 9 , September 1990 , pp. 1908 - 1917
Copyright
Copyright © Materials Research Society 1990

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References

1Fally, J. and Guenel, C., Proc. of the Int. Conf. of Photovoltaic Solar Energy, Cannes, France, 589–602 (1980).Google Scholar
2Fally, J., Fabre, E., and Chabot, B., Rev. Phys. Appl. 22, 529–534 (1987).CrossRefGoogle Scholar
3Nouet, G., Lay, P., and Chermant, J. L., Rev. Phys. Appl. 22, 535–547 (1987).CrossRefGoogle Scholar
4Lay, P., Thèse docteur ingénieur, Université de Caen, France (1987).Google Scholar
5Donon, J., Lauvray, H., Lay, P., Fally, J., and Beaudereau, C., Proc. of the 17th IEEE, Photovoltaic Conf., Orlando, FL, 296 (1984).Google Scholar
6Andonov, P., Dervin, P., and Esling, C., Rev. Phys. Appl. 22, 603–612 (1987).CrossRefGoogle Scholar
7Andonov, P., Analysis 16 (9–10), 24–29 (1988).CrossRefGoogle Scholar
8Lay, P., Nouet, G., Coster, M., Chermant, L., and Chermant, J. L., Rev. Phys. Appl. 22, 549–555 (1987).CrossRefGoogle Scholar
9Mardon, J. P., Thèse 3ième cycle, Université Paris-Sud, Orsay (1977).Google Scholar
10Dervin, P., “Utilisation des faisceaux de neutrons en métallurgie,” edited by C.E.A. (1981).Google Scholar
11Andonov, P., Dervin, P., and Esling, C., M. E.S.-Rev. de métallurgie S. F. M. Journée d'automne, 439 (1987).Google Scholar
12Lee, D. B., J. Appl. Phys. 40 (11), 4569–4574 (1969).CrossRefGoogle Scholar
13Turner, D. R., The Surface Chemistry of Metals and Semiconductors, edited by Gatos, H. C. (John Wiley and Sons, New York, 1960).Google Scholar