Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-23T11:50:58.121Z Has data issue: false hasContentIssue false
  • English
  • Français

Neutron Rietveld refinement of the structure of the ternary silicide Ti4Ni4Si7

Published online by Cambridge University Press:  31 January 2011

E. Horache ,
T. P. Feist ,
J. A. Stuart  and
J. E. Fischer
E. Horache
Affiliation:
Department of Materials Science and Engineering, LRSM, 3231 Walnut Street, University of Pennsylvania, Philadelphia, Pennsylvania 19104
T. P. Feist
Affiliation:
Department of Materials Science and Engineering, LRSM, 3231 Walnut Street, University of Pennsylvania, Philadelphia, Pennsylvania 19104
J. A. Stuart
Affiliation:
Department of Materials Science and Engineering, LRSM, 3231 Walnut Street, University of Pennsylvania, Philadelphia, Pennsylvania 19104
J. E. Fischer
Affiliation:
Department of Materials Science and Engineering, LRSM, 3231 Walnut Street, University of Pennsylvania, Philadelphia, Pennsylvania 19104
Get access

Abstract

The structure of Ti4Ni4Si7 is studied using powder neutron diffraction and Rietveld analysis. Prccise determination of the crystalline parameters, atomic positions, and temperature factors is achieved. A criterion previously elaborated for the phase TiFeSi2 is used to determine the coordination number. From the arrangement of the atoms in the unit cell and their interbond distances, we find that Si atoms are nearest neighbors to Ti and Ni. An extension of the same criterion shows that Ti–Ni and Ni–Si hybridization is likely to be strong while Ti–Ni hybridization is weak. A comparison with mono- and disilicides is made.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 9 , September 1990 , pp. 1887 - 1893
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Murarka, S. P., Silicides for VLSI Applications (Academic Press, New York, 1983).Google Scholar
2d, F. M.'Heurle, Tersoff, J., Finstad, T. G., and Cros, A., J. Appl. Phys. 59, 177 (1986).Google Scholar
3Westbrook, J. H., DiCerbo, R. K., and Peat, A. J., GE Technical Report, #58-;RL-;2117 (1958).Google Scholar
4 V. Ya. Markiv, Gladyshevskii, E. I., Kripyakevich, P. I., and Fedoruk, T. I., Neorg. Mater. 2 (7), 1317 (1966).Google Scholar
5Ya, V.. Markiv, Acta Cryst. 21 (7), A84 (1966).Google Scholar
6Jeitschko, W., Jordan, A. G., and Beck, P. A., Trans. TMS-;AIME 245, 335 (1969).Google Scholar
7Markiv, V. Ya., Lysenko, L. A., and Gladyshevskii, E. I., Neorg. Mater. 2 (11), 1980 (1966).Google Scholar
8Voroshilov, Yu. V., Markiv, V. Ya., and Gladyshevskii, E. I., Neorg. Mater. 3 (8), 1404 (1967).Google Scholar
9Horache, E., Van, J.Speigel, der, and Fischer, J. E., to be published in Thin Solid Films.Google Scholar
10Rietveld, H. M., Acta Cryst. 22, 151 (1967); Rietveld, H. M., J. Appl. Cryst. 2, 65 (1969).Google Scholar
11Wiles, D. B. and Young, R. A., J. Appl. Cryst. 14, 149 (1981).Google Scholar
12Howard, C. J. and Hill, R. J., AAEC Report No. 000 (1985).Google Scholar
13Newsam, J. (personal communication).Google Scholar
14Koster, L., Springer Tracts in Modern Physics, 36–39 (1977).Google Scholar
15International Tables for X-;ray Crystallography (The Kynoch Press, Birmingham, England, 1969), pp. 241–242.Google Scholar
16Steinmetz, J., Venturini, G., Roques, B., Engel, N., Chabot, B., and Parthe, E., Acta Cryst. 18, 900 (1965).Google Scholar
17Shoemaker, C. B. and Shoemaker, D. B., Acta Cryst. 18, 900 (1965).Google Scholar
18Pearson's Handbook of Crystallographic Data for Intermetallic Phases, edited by Villars, P. and Calvert, L. P. (ASM, Metals Park, OH, 1985), Vol. 3.Google Scholar
19Buerger, M. J., Contemporary Crystallography (McGraw-;Hill Company, New York, 1970), p. 326.Google Scholar
20Horache, E., Fischer, J. E., and Ruckman, M. W., in preparation.Google Scholar