Published online by Cambridge University Press: 17 January 2013
To explore the relationships between microstructure and growth direction, metallic A-type antiferromagnetic and anisotropic magnetoresistant Nd0.45Sr0.55MnO3 (NSMO) thin films were grown on SrTiO3(110) by pulsed laser deposition method and characterized by (scanning) transmission electron microscopy. The interface between NSMO and SrTiO3 (110) is flat and sharp. The NSMO thin films exhibit a two-layered structure: a continuous perovskite layer epitaxially grown on the substrate followed by an epitaxially grown columnar nanostructure [Fig. 1(a)]. High-density stacking faults were found in the nanostructured layer with an in-plane translational displacement of 1/2a<111>, accompanied by 1/2a[001] partial dislocations or (110) antiphase boundaries (APBs). These stacking faults terminate either at pores or in the grain matrix to eliminate (1$\bar 1$0) APBs. The formation mechanisms of the nanostructured NSMO films and the relevant stacking faults are discussed from the viewpoint of both film growth and specific substrate direction.