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Nanoscale planar faulting in nanocrystalline Ni–W thin films: Grain growth, segregation, and residual stress

Published online by Cambridge University Press:  26 September 2011

Udo Welzel ,
Johannes Kümmel ,
Ewald Bischoff ,
Silke Kurz  and
Eric Jan Mittemeijer
Udo Welzel*
Affiliation:
Max Planck Institute for Intelligent Systems (formerly: Max Planck Institute for Metals Research), D-70569 Stuttgart, Germany
Johannes Kümmel
Affiliation:
Institute for Materials Science, University of Stuttgart, D-70569 Stuttgart, Germany
Ewald Bischoff
Affiliation:
Max Planck Institute for Intelligent Systems (formerly: Max Planck Institute for Metals Research), D-70569 Stuttgart, Germany
Silke Kurz
Affiliation:
Max Planck Institute for Intelligent Systems (formerly: Max Planck Institute for Metals Research), D-70569 Stuttgart, Germany
Eric Jan Mittemeijer
Affiliation:
Max Planck Institute for Intelligent Systems (formerly: Max Planck Institute for Metals Research), D-70569 Stuttgart, Germany; and Institute for Materials Science, University of Stuttgart, D-70569 Stuttgart, Germany
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Pure Ni and Ni–W thin films with different W contents (<22 at.%) and a thickness of 500 nm have been produced by (co)sputtering. The phase composition, changes in residual stress, crystallite size, microstrain, and texture have been investigated employing in-situ x-ray diffraction measurements (25–550 °C) and ex-situ transmission electron microscopy analyses. For all compositions investigated, W dissolves substitutionally in Ni. The dissolution of W results in a highly columnar nanocrystalline microstructure with grain aspect ratios (height to width) exceeding 10. The Ni(W) solid solution exhibits a very high density of planar (twin and intrinsic stacking) faults oriented perpendicular to the growth direction. Whereas grain coarsening occurs for the nanocrystalline pure Ni thin films already upon heating to temperatures as low as about 125 °C, the microstructure of the nanocrystalline Ni–W thin films remains stable up to much higher temperatures, that is, even exceeding 350 °C. Above 350 °C, a W depletion of the Ni–W layer as a result of W segregation at planar faults occurs, which is accompanied by a change in lattice constant and in-plane stress.

Keywords

X-ray diffractionThin filmNanoscale
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 19 , 14 October 2011 , pp. 2558 - 2573
Copyright
Copyright © Materials Research Society 2011

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