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MoS2−xOx solid solutions in thin films produced by rf-sputter-deposition

Published online by Cambridge University Press:  31 January 2011

Jeffrey R. Lince
Jeffrey R. Lince
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, 2350 East El Segundo Boulevard, El Segundo, California 90245
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Abstract

The chemical composition and structure of MoS2 solid lubricant films are intimately related to their friction and wear characteristics. We have conducted an x-ray photoelectron spectroscopy (XPS) study of 1-μm thick radio frequency (rf)-sputter-deposited MoS2 films to determine the chemical state of the films, focusing on the role of oxygen impurities. Concentrations of chemisorbed and bulk species were determined from the Mo 3d, S 2p, and O 1s peak shapes and intensities after annealing the films to temperatures from 425 to 975 K. Films deposited on substrates that were at ∼345 K [ambient temperature (AT) films] and on substrates heated to ∼525 K [high temperature (HT) films] both had ∼10% oxygen within the bulk of the films. The relative areas and shapes of the XPS peaks for the HT films at all annealing temperatures were consistent with the formation of a MoS2−xOx solid solution, where O atoms were probably substituted into S sites in the 2H–MoS2 crystal lattice. In AT films, this phase composition was stable only for annealing temperatures ≥725 K, in agreement with previous studies of the changes in crystal structure of AT films with annealing. The results are discussed in terms of previous studies of the structure and composition of sputter-deposited MoS2 films.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 1 , January 1990 , pp. 218 - 222
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Spalvins, T., NASA Tech. Note D-7170, 1973.Google Scholar
2 Spalvins, T., Thin Solid Films 96, 17 (1982).CrossRefGoogle Scholar
3 Reichelt, K. and Mair, G., J. Appl. Phys. 49, 1245 (1978).CrossRefGoogle Scholar
4 Buck, V., Vacuum 36, 89 (1986).CrossRefGoogle Scholar
5 Dimigen, H., Hubsch, H., Willich, P., and Reichelt, K., Thin Solid Films 129, 79 (1985).CrossRefGoogle Scholar
6 Fleischauer, P. D., ASLE Trans. 27, 82 (1984).CrossRefGoogle Scholar
7 Lince, J. R. and Fleischauer, P. D., J. Mater. Res. 2, 827 (1987).CrossRefGoogle Scholar
8 Fleischauer, P. D. and Bauer, R., Trib. Trans. 31, 239 (1988).CrossRefGoogle Scholar
9 Bertrand, P. A., J. Mater. Res. 4, 180 (1989).CrossRefGoogle Scholar
10 Buck, V., Wear 114, 263 (1987).CrossRefGoogle Scholar
11 Jervis, T. R., Bauer, R., Nastasi, M., and Fleischauer, P.D., Thin Solid Films (in press).Google Scholar
12 Seah, M.P., Dench, W. A., SIA, Surf. Interf. Anal. 1, 2 (1979);CrossRefGoogle Scholar
Tanuma, S., Powell, C. J., and Penn, D.R., Surf. Sci. 192, 849 (1987).CrossRefGoogle Scholar
13 Fleischauer, P.D., Thin Solid Films 154, 309 (1987).CrossRefGoogle Scholar
14 Stewart, T. B. and Fleischauer, P. D., Inorg. Chem. 21, 2426 (1982).CrossRefGoogle Scholar