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MoS2 deposited by ion beam assisted deposition: 2H or random layer structure?

Published online by Cambridge University Press:  31 January 2011

D. N. Dunn ,
L. E. Seitzman  and
I. L. Singer
D. N. Dunn
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375
L. E. Seitzman
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375
I. L. Singer
Affiliation:
Naval Research Laboratory, Code 6176, Washington, DC 20375
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Abstract

The structure of MoS2 films grown by ion beam assisted deposition is investigated using transmission electron microscopy. Films consist of stacks of S–Mo–S planes with a [001] texture; however, three-dimensional crystal symmetry is disrupted by a high density of planar defects. Selected area electron diffraction patterns show (hk0) and (00l) reflections, features similar to a random layer structure, as well as diffuse (103) reflections. It is suggested that these films do not have a true random layer structure, but rather a two-dimensional structure formed by nonrandom in-plane translations.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 3001 - 3007
Copyright
Copyright © Materials Research Society 1998

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