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Modeling of a–Si:H deposition in a dc glow discharge reactor

Published online by Cambridge University Press:  31 January 2011

Dariusz Orlicki ,
Vladimir Hlavacek  and
Hendrik J. Viljoen
Dariusz Orlicki
Affiliation:
Laboratory for Ceramic and Reaction Engineering, Department of Chemical Engineering, State University of New York at Buffalo, Buffalo, New York 14260
Vladimir Hlavacek
Affiliation:
Laboratory for Ceramic and Reaction Engineering, Department of Chemical Engineering, State University of New York at Buffalo, Buffalo, New York 14260
Hendrik J. Viljoen*
Affiliation:
Department of Chemical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska 68588–0126
*
a)Author to whom correspondence should be addressed.
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Abstract

PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Druyvesteyn distributions are compared and the numerical results show that the deposition rate is lower for the Druyvesteyn distribution. The plasma chemistry model includes silane, silyl, silylene, disilane, hydrogen, and atomic hydrogen. The sensitivity of the deposition rate toward the branching ratios SiH3 and SiH2 as well as H2 and H during silyl dissociation is examined. Further parameters that are considered in the sensitivity analysis include anode/cathode temperatures, pressure, applied voltage, gap distance, gap length, molar fraction of SiH4, and flow speed. This work offers insight into the effects of all design and control variables.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2160 - 2181
Copyright
Copyright © Materials Research Society 1992

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