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Model for zinc oxide varistor

Published online by Cambridge University Press:  31 January 2011

J. D. Santos ,
E. Longo ,
E. R. Leite  and
J. A. Varela
J. D. Santos
Affiliation:
Departamento de Química Universidade Federal de São Carlos, C.P. 676, 13565-905, São Carlos, SP, Brazil
E. Longo
Affiliation:
Departamento de Química Universidade Federal de São Carlos, C.P. 676, 13565-905, São Carlos, SP, Brazil
E. R. Leite
Affiliation:
Departamento de Química Universidade Federal de São Carlos, C.P. 676, 13565-905, São Carlos, SP, Brazil
J. A. Varela
Affiliation:
Universidade Estadual Paulista, Instituto de Química, C.P. 355, 14800-900, Araraquara, SP, Brazil
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Abstract

Zinc oxide varistors are very complex systems, and the dominant mechanism of voltage barrier formation in these systems has not been well established. Yet the MNDO quantum mechanical theoretical calculation was used in this work to determine the most probable defect type at the surface of a ZnO cluster. The proposed model represents well the semiconducting nature as well as the defects at the ZnO bulk and surface. The model also shows that the main adsorption species that provide stability at the ZnO surface are O-, O2-, and O2.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 5 , May 1998 , pp. 1152 - 1157
Copyright
Copyright © Materials Research Society 1998

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