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A model for the effect of line width and mechanical strength on electromigration failure of interconnects with “near-bamboo” grain structures

Published online by Cambridge University Press:  31 January 2011

E. Arzt  and
W.D. Nix
E. Arzt
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
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Abstract

A simple analytical model for the effect of mechanical strength and line width (for the case of narrow lines) on the electromigration failure of metallic interconnects is presented. Because the line width/grain size ratio and the diffusivity enter differently in the model, application of the resulting failure time equation to published data can provide insight into the mechanisms of enhancement of electromigration resistance by grain structure optimization and alloying.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 4 , April 1991 , pp. 731 - 736
Copyright
Copyright © Materials Research Society 1991

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