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(Mn,Zn,Fe)1−xO thin films showing ferrimagnetic property deposited by ion beam sputtering

Published online by Cambridge University Press:  03 March 2011

Hae Seok Cho ,
Sang Ki Ha ,
Min Hong Kim  and
Hyeong Joon Kim
Hae Seok Cho
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
Sang Ki Ha
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
Min Hong Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
Hyeong Joon Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, Seoul 151–742, Korea
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Abstract

We deposited (Mn,Zn,Fe)1−xO thin films of a wüstite structure on SiO2/Si(100) by ion beam sputtering using a single-crystal Mn-Zn ferrite target. The wüstite structure of the as-deposited film, confirmed by XRD, TEM, and XPS analysis, appeared to originate from an oxygen-deficit ambient and also from the preferential resputtering of the oxygen ions in films during deposition. The as-deposited films showed ferrimagnetic characteristics having quite a large Ms in spite of their crystallographic structure, wüstite. Such an unusual phenomenon is presumably due to the different magnetic moments of the constituent cations with disordered distribution. This wüstite phase could be transformed into the spinel ferrite phase with the same preferred orientation during postannealing under an appropriate oxygen partial pressure. The interplanar distance of the as-deposited films decreased with increasing Ts due to a release of compressive stress. The Ms of the film had a maximum value at about 275 °C, while the resistivity, mainly governed by the grain boundaries, was almost the same irrespective of Ts.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 2 , February 1995 , pp. 274 - 279
Copyright
Copyright © Materials Research Society 1995

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