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Microstructure of LaB6-base thick film resistors

Published online by Cambridge University Press:  31 January 2011

Z.G. Li ,
P.F. Carcia  and
P.C. Donohue
Z.G. Li
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
P.F. Carcia
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
P.C. Donohue
Affiliation:
Du Pont Central Research and Development, The Experimental Station, P.O. Box 80356, Wilmington, Delaware 19880-0356
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Abstract

The microstructure of LaB6-base thick film resistors was investigated by cross-sectional transmission electron microscopy. The specimens were prepared by a technique that polished them to a thin wedge, thus avoiding ion-milling and permitting imaging over a distance of tens of microns. The resistor microstructure contained a finely divided electrically conductive phase of TaB2 and nonconducting crystals of CaTa4O11, formed during high temperature processing of glass and LaB6 ingredients of the thick film ink. Using higher surface area ingredients virtually suppressed the formation of CaTa4O11 crystals, and the microstructure became more uniform. Resistors made with higher surface area intermediates also had better voltage withstanding properties.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2225 - 2229
Copyright
Copyright © Materials Research Society 1992

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