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Microstructure of CuInS2 films prepared by sulfuration of Cu–In–O films

Published online by Cambridge University Press:  31 January 2011

Takahiro Wada ,
Takayuki Negami  and
Mikihiko Nishitani
Takahiro Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
Takayuki Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
Mikihiko Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi Osaka, 570 Japan
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Abstract

Polycrystalline CuInS2 thin films are prepared by sulfuration of Cu–In–O films. The Cu–In–O films are deposited from a sintered Cu2In2O5 target by using a pulsed laser deposition (PLD) method. Then, the Cu–In–O films are converted into CuInS2 films by means of a subsequent annealing in an H2S gas atmosphere. The characteristics of the films are determined by using an x-ray diffractometer (XRD), an energy dispersive x-ray spectrometer (EDX), and a scanning electron microscope (SEM). The effects of the deposition and sulfuration temperatures of the Cu–In–O films on the structural and microstructural properties of CuInS2 films are examined experimentally. Single-phase CuInS2 films with a chalcopyrite structure are obtained when Cu–In–O films are sulfurated at a temperature higher than 400 °C. Grain size of CuInS2 is larger when a lower deposition temperature and a higher sulfuration temperature of Cu–In–O films are employed.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 545 - 550
Copyright
Copyright © Materials Research Society 1993

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References

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