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Microstructure observations of silicon carbide nanorods

Published online by Cambridge University Press:  31 January 2011

H. Y. Peng ,
X. T. Zhou ,
H. L. Lai ,
N. Wang  and
S. T. Lee
H. Y. Peng
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, People's Republic of China
X. T. Zhou
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, People's Republic of China
H. L. Lai
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, People's Republic of China
N. Wang
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, People's Republic of China
S. T. Lee
Affiliation:
Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, People's Republic of China
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Abstract

The microstructures of β-SiC nanorods synthesized by hot-filament chemical vapor deposition were studied in detail by high-resolution electron microscopy. Two distinct types of nanorods were identified. The longer nanorods (lengths > 0.1 mm) contained globules at their tips and a relatively low density of stacking faults perpendicular to their [111] growth direction. It was also observed that SiC nanorods that grew along [100] direction contained no planar defects. Meanwhile, Ni was found to be an effective catalyst for SiC nanorod growth. The short nanorods (lengths < 50 nm), which contained no globules at their ends, can grow along [111], [100], or [112] direction. The growth of these nanorods was interpreted by a two-dimensional vapor–solid mechanism.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 2020 - 2026
Copyright
Copyright © Materials Research Society 2000

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