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Microstructure and ferroelectric properties of fine-grained BaxSr1−xTiO3 thin films prepared by metalorganic decomposition

Published online by Cambridge University Press:  31 January 2011

Majed S. Mohammed
Affiliation:
Department of Physics & Astronomy, Wayne State University, Detroit, Michigan 48202
Ratna Naik
Affiliation:
Department of Physics & Astronomy, Wayne State University, Detroit, Michigan 48202
Joseph V. Mantese
Affiliation:
General Motors Research and Development Laboratories, Electrical and Electronics Department, 30500 Mound Road, Warren, Michigan 48090–9055
Norman W. Schubring
Affiliation:
General Motors Research and Development Laboratories, Electrical and Electronics Department, 30500 Mound Road, Warren, Michigan 48090–9055
Adolph L. Micheli
Affiliation:
General Motors Research and Development Laboratories, Electrical and Electronics Department, 30500 Mound Road, Warren, Michigan 48090–9055
Antonio B. Catalan
Affiliation:
General Motors Research and Development Laboratories, Electrical and Electronics Department, 30500 Mound Road, Warren, Michigan 48090–9055
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Abstract

Thin films of BaxSr1−xTiO3 (x = 0.7, 0.8, 0.9, and 1.0) were prepared by metalorganic decomposition (MOD). The relative permittivity, dissipation, polarization, resistivity, and grain size of these films were studied as a function of composition and temperature. Ferroelectric hysteresis loops were observed for all values of x and were found to be independent of measurement temperature though strongly dependent upon grain size.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

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