Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-27T03:45:13.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and adhesion properties of Sn–0.7Cu/Cu solder joints

Published online by Cambridge University Press:  31 January 2011

Kyoo-Sik Bae  and
Si-Jung Kim
Kyoo-Sik Bae
Affiliation:
Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do, 445–743, Korea
Si-Jung Kim
Affiliation:
Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do, 445–743, Korea
Get access

Abstract

The microstructure and adhesion strength of the Sn–0.7Cu/Cu solder joints were examined. The acicular η(Cu6Sn5)-phase was formed inside the solder and at the solder/Cu interface, mostly in the direction normal to the interface. Compared to the Sn–3.5Ag alloy, the Sn–0.7Cu solder showed comparable wettability, but lower microhardness and joint strength. After aging, the acicular η-phase grew into a round and scallop-shaped morphology, thin є(Cu3Sn)-phase evolved just above the Cu substrate, and the joint strength decreased linearly with aging time.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 743 - 746
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Kang, S.K. and Sarkhel, A.K., J. Electron. Mater. 23d, 701 (1994).CrossRefGoogle Scholar
2Shohji, I., Fujiwara, S., Kiyono, S., and Kobayashi, K.F., Scirpta Mat. 40, 815 (1999).CrossRefGoogle Scholar
3Yang, W., Felton, L.E., and Messler, R.W. Jr., J. Electron. Mater. 24, 1465 (1995).CrossRefGoogle Scholar
4Flanders, D.R., Jacobs, E.G., and Pinizzotto, R.F., J. Electron. Mater. 26, 701 (1997).CrossRefGoogle Scholar
5Sigelko, J., Choi, S., Subranamian, K.N., Lucas, J.P., and Bieler, T.R., J. Electron. Mater. 28, 1184 (1999).CrossRefGoogle Scholar
6Trumble, B., IEEE Spectrum 35, 55, (May 1998).CrossRefGoogle Scholar
7May, J. and Morris, J.W., J. Electron. Mater. 21, 599 (1992).Google Scholar
8Schaefer, M., Fournelle, R.A., and Liang, J., J. Electron. Mater. 27, 1167 (1998).CrossRefGoogle Scholar
9Chen, S-W. and Chen, Y-W., J. Electron. Mater. 28, 1203 (1999).CrossRefGoogle Scholar
10Tu, K.N., Acta Metall. 21, 347 (1973).CrossRefGoogle Scholar
11Chada, S., Fournelle, R.A., Laub, W., and Shangguan, D., J. Electron. Mater. 29, 1214 (2000).CrossRefGoogle Scholar
12Laine-Ylijoki, T., Steen, H., and Forsten, A., IEEE Trans.-CPMT Part C,20, 194 (1997)Google Scholar
13Suganuma, K., Murata, T., Noguchi, H., and Toyoda, Y., J. Mater. Res. 15, 884 (2000).CrossRefGoogle Scholar
14Plumbridge, W.J. and Gagg, C.R., J. Mater. Sci. 10, 461 (1999).Google Scholar
15Jang, J.W., Liu, C.Y., Kim, P.G., Tu, K.N., Mal, A.K., and Frear, D.R., J. Mater. Res. 15, 1679 (2000).CrossRefGoogle Scholar
16Yu, S., Wang, M., and Hon, M., J Mater. Res. 16, 76 (2001).CrossRefGoogle Scholar