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Microstructural investigation of BaTiO3 thin films deposited on (001) MgO

Published online by Cambridge University Press:  31 January 2011

C. H. Lei*
Affiliation:
EMAT-RUCA, University Antwerp, Groenenborgerlaan 171, Antwerp, B-2020, Belgium
G. Van Tendeloo
Affiliation:
EMAT-RUCA, University Antwerp, Groenenborgerlaan 171, Antwerp, B-2020, Belgium
M. Siegert
Affiliation:
Institut für Schicht und Ionontechnik, Jülich Research Centre, D-52425, Jülich, Germany
J. Schubert
Affiliation:
Institut für Schicht und Ionontechnik, Jülich Research Centre, D-52425, Jülich, Germany
*
a)Address all correspondence to this author.[email protected]
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Abstract

The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b1 = 〈100〉 or b2 = 〈110〉, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3〈112〉 or 1/3〈111〉 partial dislocations; the displacement vector of the antiphase boundaries is 1/2〈101〉. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2〈110〉 and 1/2〈101〉.

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Articles
Copyright
Copyright © Materials Research Society 2002

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