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Micron thick epitaxial (100) Ag film growth on MgO

Published online by Cambridge University Press:  31 January 2011

A. C. Carter ,
W. Chang ,
S. B. Qadri ,
J. S. Horwitz ,
Robert Leuchtner  and
D. B. Chrisey
A. C. Carter
Affiliation:
Naval Research Laboratory, Washington, DC 20375
W. Chang
Affiliation:
Naval Research Laboratory, Washington, DC 20375
S. B. Qadri
Affiliation:
Naval Research Laboratory, Washington, DC 20375
J. S. Horwitz
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Robert Leuchtner
Affiliation:
Naval Research Laboratory, Washington, DC 20375
D. B. Chrisey
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Epitaxial films of (100) Ag were deposited onto (100) MgO substrates to a thickness of 4 μm with no evidence of (111) nucleation. Deposited films were smooth and had large areas, 50 × 50 microns square, free of morphological defects. Films were deposited using a two-step process. First, pulsed laser deposition was used to grow a 1000 Å Ag (100) seed layer on the MgO substrate. Second, e−beam evaporation was used to grow the film to the desired thickness. The high quality of the resulting films will allow them to be used as templates for further epitaxial deposition of other applied materials.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1418 - 1421
Copyright
Copyright © Materials Research Society 1998

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