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Metal-nonmetal transition and resistivity of silicon implanted with bismuth

Published online by Cambridge University Press:  31 January 2011

E. Abramof ,
A. Ferreira da Silva ,
Bo E. Sernelius ,
J. P. de Souza  and
H. Boudinov
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais (INPE), Laboratório Associado de Sensores e Materiais-LAS, CP 515, 12201-970 São José dos Campos-SP, Brazil
A. Ferreira da Silva
Affiliation:
Instituto Nacional de Pesquisas Espaciais (INPE), Laboratório Associado de Sensores e Materiais-LAS, CP 515, 12201-970 São José dos Campos-SP, Brazil
Bo E. Sernelius
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
J. P. de Souza
Affiliation:
Instituto de Física–UFRGS, 91501–970 Porto Alegre-RS, Brazil
H. Boudinov
Affiliation:
Instituto de Física–UFRGS, 91501–970 Porto Alegre-RS, Brazil
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Abstract

Bismuth was implanted at room temperature in (100)-Si wafers with controlled energy and doses to result in a plateau-like implantation profile. The van der Pauw Si : Bi samples were characterized by the Hall effect and resistivity measurements from room temperature down to 13 K. The electron concentration of the prepared samples at 290 K varied from 3.0 × 1017 to 1.4 × 1020 cm−3. The resistivity of the Si : Bi samples presents a larger enhancement, compared to other dopants, when decreasing the Bi concentration. The metal-nonmetal transition was determined to be around 2 × 1019 cm−3. The calculated values obtained from the Generalized Drude Approach and an equation derived from Kubo formalism agree very well with the experimental data. The results confirm also the behavior ρc (Bi) < ρc(As) < ρc(P) < ρc(Sb) at 290 K.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 641 - 645
Copyright
Copyright © Materials Research Society 1997

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