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Metal film deposition by laser breakdown chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

T.R. Jervis  and
L.R. Newkirk
T.R. Jervis
Affiliation:
Materials Science and Technology Division, Mailstop E-549, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
L.R. Newkirk
Affiliation:
Materials Science and Technology Division, Mailstop E-549, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 3 , June 1986 , pp. 420 - 424
Copyright
Copyright © Materials Research Society 1986

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References

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