Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-27T06:45:35.752Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanism and an empirical model of the fixed abrasivepolishing process on a web-format tool

Published online by Cambridge University Press:  31 January 2011

Rajasekhar Venigalla ,
Laertis Economikos  and
S. V. Babu
Rajasekhar Venigalla
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
Laertis Economikos
Affiliation:
IBM Microelectronics, East Fishkill Facility, Hopewell Junction, New York 12533
S. V. Babu
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
Get access

Abstract

Several chemical–mechanical planarization characterization test wafers were polished to understand the polishing mechanism of the fixed abrasive process. Oxide thickness removal in the “active” (up) and the “recessed” (down) regions of the wafer was monitored for different times of polish. It was found that there was no significant removal in the recessed areas until the step height was reduced to about 100 Å, and the polish rate in the active area decreased rapidly once this critical step height had been attained. At this critical step height, the polish rate of the down areas started to increase and approached that of the up area, with both eventually reaching the negligibly low removal rate of the blanket wafer. The drop in the polish rate of the up area, after planarity had been attained, was fitted to an exponential model.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 7 , July 2003 , pp. 1659 - 1667
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Chemical-Mechanical Polishing-Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Symp. 671, Warrendale, PA, 2001).Google Scholar
2.Chemical-Mechanical Polishing 2000: Fundamentals and Material Issues, edited by Singh, R.K., Bajaj, R., Moinpour, M., and Meuris, M. (Mater. Res. Soc. Symp. Proc. 613, Warrendale, PA, 2000).Google Scholar
3.Gagliardi, J.J. and Vo, T., in Proceedings of the 16th VLSI Multilevel Interconnect Conference (1999), p. 223.Google Scholar
4.Walker, M.A. and Moore, S.E., U.S. Patent No. 6 402 601 (2002).Google Scholar
5.Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical Mechanical Planarization of Microelectronic Materials (Wiley, New York, 1996), p. 30.Google Scholar
6.Nguyen, V.H., Hof, A.J., Kranenburg, H. van, Woerlee, P.H., and Weimar, F., Microelectron. Eng. 55, 305 (2001).CrossRefGoogle Scholar
7.Peters, L., Semicond. Int. April (1999).Google Scholar
8.Schlueter, J., Semicond. Int. October (1999).Google Scholar
9.Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era (Lattice Press, Sunset Beach, CA, 2000), Vol. 1, p. 830.Google Scholar
10.Vo, T., Buley, T., and Gagliardi, J.J., Solid State Technol. June (2000).Google Scholar
11.Gagliardi, J.J. and Vo, T., in Proceedings of the CMP-MIC Conference (2000), p. 373.Google Scholar
12.Romer, A., Donohue, T., Gagliardi, J.J., Weimar, F., Theime, P., and Hollatz, M., in Proceedings of CMP-MIC Conference (2000).Google Scholar
13.Economikos, L., Jamin, F.F., Ticknor, A., and Simpson, A., in Proceedings of CMP-MIC Conference (2001).Google Scholar
14.Lee, B., Boning, D.S., and Economikos, L., in Proceedings of CMPMIC Conference (2001), p. 395.Google Scholar
15.Burke, P.A., in Proceedings of the VLSI Multilevel Interconnect Conference (1991), p. 379.Google Scholar
16.Grillaert, J., Meuris, M., Heylen, N., Devriendt, K., Vrancken, E., and Heyns, M., in Proceedings of CMP-MIC Conference (1998), p. 79.Google Scholar
17.Simpson, A., Economikos, L., Jamin, F.F., and Ticknor, A., in Chemical-Mechanical Polishing-Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Proc. 671, Warrendale, PA, 2001), p. M4.1.Google Scholar
18.Ouma, D., Lee, B., and Boning, D.S., Dielectric CMP Characterization Mask Documentation, Version 1.2 (characterization for STI), revised May 4, 1999 (MIT, Cambridge, MA, 1999).Google Scholar
19.Gorantla, V.R. and Babu, S.V., Provisional Patent applied in U.S. Patent Office (August 2002).Google Scholar
20.Gorantla, V.R., Venigalla, R., Economikos, L., Oconnor, D.R., and Babu, S.V., J. Electrochem. Soc. (2003, accepted for publication).Google Scholar