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Mechanical strength and microstructure of oxygen ion-implanted Al films

Published online by Cambridge University Press:  03 March 2011

S. Bader
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
P.A. Flinn
Affiliation:
Intel Corporation, SC9-45, 2250 Mission College Boulevard, Santa Clara, California 95124, and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Stuttgart, Germany
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

The influence of finely dispersed, stable particles on the mechanical strength and microstructure of Al films on Si substrates has been studied. Aluminum oxide particles were produced in Al films by oxygen ion implantation, and the grain size was increased by a laser reflow treatment. Transmission electron microscopy (TEM) was employed to observe the oxide particles and the grain structure in the films after subsequent annealing, and the wafer curvature technique was used to study the deformation properties of the films as a function of temperature. Significant particle strengthening was obtained in the coarse-grained films in tension as well as in compression. In the as-deposited and ion-implanted films a very fine grain size of only 0.35 μm is stabilized after annealing which causes considerable softening of the film in compression at higher temperature because of the enhancement of grain boundary and volume diffusion controlled relaxation mechanisms. However, in tension at low temperature these films show high stresses comparable to those of the laser reflowed and ion-implanted films. The results are discussed in the light of TEM observations.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

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